Diffusion and electrical properties of boron and arsenic doped poly-Si and poly-GexSi1-x (x ∼ 0.3) as gate material for Sub-0.25 μm complementary metal oxide Semiconductor applications

C. Salm, D. T. Van Veen, D. J. Gravesteijn, J. Holleman, P. H. Woerlee

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