Abstract
The dynamics of optical gain in semiconductor quantum dots (QDs) was investigated. Simple anal. expressions were derived, which directly connect the laser dynamical response to capture and intradot relaxation rates. The effect of hole spreading in the valence band and spectral hole burning in the QD ensemble was also quant. assessed. The anal. shows that intradot relaxation constitutes the main limitation in the dynamics and points to possible routes towards the improvement of QD lasers. [on SciFinder (R)]
Original language | English |
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Pages (from-to) | 287-294 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 43 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2007 |