Low frequency noise characteristics of light-emitting diodes with InAs quantum dots in GaInAs layer are investigated. Two noise components were found in experimental noise records: RTS, caused by burst noise, and 1/f Gaussian noise. Extraction of burst noise component from Gaussian noise background was performed using standard signal detection theory and advanced signal-processing techniques. It was found that Hooge's empirical relation applied to diodes by Kleinpenning is applicable to the electric 1/f noise of quantum dot diodes as well. Two different spectra decomposition techniques are used to obtain burst noise spectra. Bias dependences of burst and 1/f noise are compared. It is concluded that the RTS noise and 1/f noise have different physical origins in light-emitting diodes with quantum dots.
|Title of host publication||SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States|
|Place of Publication||Bellingham|
|Publication status||Published - 2003|
|Name||Proceedings of SPIE|
Vandamme, L. K. J., Belyakov, A. V., Perov, M. Y., & Yakimov, A. V. (2003). Difference in dependence of 1/f and RTS noise on current in quantum dots light emitting diodes. In SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States (pp. 368-378). (Proceedings of SPIE; Vol. 5113). SPIE. https://doi.org/10.1117/12.503166