Dielectric material options for integrated capacitors

G. Ruhl, W. Lehnert, M. Lukosius, C. Wenger, C. Baristiran Kaynak, T. Blomberg, S. Haukka, P.K. Baumann, W.F.A. Besling, A.L. Roest, B. Riou, S. Lhostis, A. Halimaou, F. Roozeboom, E. Langereis, W.M.M. Kessels, A. Zauner, S.A. Rushworth

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
412 Downloads (Pure)

Abstract

Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor deposition) process techniques. In this study eight dielectric materials, which can be deposited by these techniques and exhibit the potential to reach k-values of over 50 were identified, prepared and characterized as single films and stacked film systems. To primarily focus on a material comparison, preliminary processes were used for film deposition on planar test devices. Measuring leakage current density versus the dielectric constant k shows that at low voltages (=1 V) dielectrics with k-values up to 100 satisfy the typical leakage current density specification of
Original languageEnglish
Pages (from-to)N120-N125
Number of pages6
JournalECS Journal of Solid State Science and Technology
Volume3
Issue number8
DOIs
Publication statusPublished - 2014

Fingerprint

Capacitors
Leakage currents
Capacitance
Current density
Vapor deposition
Permittivity
Specifications
Electric potential

Cite this

Ruhl, G., Lehnert, W., Lukosius, M., Wenger, C., Baristiran Kaynak, C., Blomberg, T., ... Rushworth, S. A. (2014). Dielectric material options for integrated capacitors. ECS Journal of Solid State Science and Technology, 3(8), N120-N125. https://doi.org/10.1149/2.0101408jss
Ruhl, G. ; Lehnert, W. ; Lukosius, M. ; Wenger, C. ; Baristiran Kaynak, C. ; Blomberg, T. ; Haukka, S. ; Baumann, P.K. ; Besling, W.F.A. ; Roest, A.L. ; Riou, B. ; Lhostis, S. ; Halimaou, A. ; Roozeboom, F. ; Langereis, E. ; Kessels, W.M.M. ; Zauner, A. ; Rushworth, S.A. / Dielectric material options for integrated capacitors. In: ECS Journal of Solid State Science and Technology. 2014 ; Vol. 3, No. 8. pp. N120-N125.
@article{8b00362169a140e980cc8be45bf67d39,
title = "Dielectric material options for integrated capacitors",
abstract = "Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor deposition) process techniques. In this study eight dielectric materials, which can be deposited by these techniques and exhibit the potential to reach k-values of over 50 were identified, prepared and characterized as single films and stacked film systems. To primarily focus on a material comparison, preliminary processes were used for film deposition on planar test devices. Measuring leakage current density versus the dielectric constant k shows that at low voltages (=1 V) dielectrics with k-values up to 100 satisfy the typical leakage current density specification of",
author = "G. Ruhl and W. Lehnert and M. Lukosius and C. Wenger and {Baristiran Kaynak}, C. and T. Blomberg and S. Haukka and P.K. Baumann and W.F.A. Besling and A.L. Roest and B. Riou and S. Lhostis and A. Halimaou and F. Roozeboom and E. Langereis and W.M.M. Kessels and A. Zauner and S.A. Rushworth",
year = "2014",
doi = "10.1149/2.0101408jss",
language = "English",
volume = "3",
pages = "N120--N125",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

Ruhl, G, Lehnert, W, Lukosius, M, Wenger, C, Baristiran Kaynak, C, Blomberg, T, Haukka, S, Baumann, PK, Besling, WFA, Roest, AL, Riou, B, Lhostis, S, Halimaou, A, Roozeboom, F, Langereis, E, Kessels, WMM, Zauner, A & Rushworth, SA 2014, 'Dielectric material options for integrated capacitors', ECS Journal of Solid State Science and Technology, vol. 3, no. 8, pp. N120-N125. https://doi.org/10.1149/2.0101408jss

Dielectric material options for integrated capacitors. / Ruhl, G.; Lehnert, W.; Lukosius, M.; Wenger, C.; Baristiran Kaynak, C.; Blomberg, T.; Haukka, S.; Baumann, P.K.; Besling, W.F.A.; Roest, A.L.; Riou, B.; Lhostis, S.; Halimaou, A.; Roozeboom, F.; Langereis, E.; Kessels, W.M.M.; Zauner, A.; Rushworth, S.A.

In: ECS Journal of Solid State Science and Technology, Vol. 3, No. 8, 2014, p. N120-N125.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Dielectric material options for integrated capacitors

AU - Ruhl, G.

AU - Lehnert, W.

AU - Lukosius, M.

AU - Wenger, C.

AU - Baristiran Kaynak, C.

AU - Blomberg, T.

AU - Haukka, S.

AU - Baumann, P.K.

AU - Besling, W.F.A.

AU - Roest, A.L.

AU - Riou, B.

AU - Lhostis, S.

AU - Halimaou, A.

AU - Roozeboom, F.

AU - Langereis, E.

AU - Kessels, W.M.M.

AU - Zauner, A.

AU - Rushworth, S.A.

PY - 2014

Y1 - 2014

N2 - Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor deposition) process techniques. In this study eight dielectric materials, which can be deposited by these techniques and exhibit the potential to reach k-values of over 50 were identified, prepared and characterized as single films and stacked film systems. To primarily focus on a material comparison, preliminary processes were used for film deposition on planar test devices. Measuring leakage current density versus the dielectric constant k shows that at low voltages (=1 V) dielectrics with k-values up to 100 satisfy the typical leakage current density specification of

AB - Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor deposition) process techniques. In this study eight dielectric materials, which can be deposited by these techniques and exhibit the potential to reach k-values of over 50 were identified, prepared and characterized as single films and stacked film systems. To primarily focus on a material comparison, preliminary processes were used for film deposition on planar test devices. Measuring leakage current density versus the dielectric constant k shows that at low voltages (=1 V) dielectrics with k-values up to 100 satisfy the typical leakage current density specification of

U2 - 10.1149/2.0101408jss

DO - 10.1149/2.0101408jss

M3 - Article

VL - 3

SP - N120-N125

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 8

ER -

Ruhl G, Lehnert W, Lukosius M, Wenger C, Baristiran Kaynak C, Blomberg T et al. Dielectric material options for integrated capacitors. ECS Journal of Solid State Science and Technology. 2014;3(8):N120-N125. https://doi.org/10.1149/2.0101408jss