Dielectric interface-dependent spatial charge distribution in ambipolar polymer semiconductors embedded in dual-gate field-effect transistors

J. Lee, W.S.C. Roelofs, R.A.J. Janssen, G.H. Gelinck

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Abstract

The spatial charge distribution in diketopyrrolopyrrole-containing ambipolar polymeric semiconductors embedded in dual-gate field-effect transistors (DGFETs) was investigated. The DGFETs have identical active channel layers but two different channel/gate interfaces, with a CYTOP™ organic dielectric layer for the top-gate and an octadecyltrichlorosilane (ODTS) self-assembled monolayer-treated inorganic SiO2 dielectric for the bottom-gate, respectively. Temperature-dependent transfer measurements of the DGFETs were conducted to examine the charge transport at each interface. By fitting the temperature-dependent measurement results to the modified Vissenberg-Matters model, it can be inferred that the top-channel interfacing with the fluorinated organic dielectric layers has confined charge transport to two-dimensions, whereas the bottom-channel interfacing with the ODTS-treated SiO2 dielectric layers has three-dimensional charge transport.

Original languageEnglish
Article number043301
Number of pages5
JournalApplied Physics Letters
Volume109
Issue number4
DOIs
Publication statusPublished - 25 Jul 2016

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