Interface delamination is one of the most important issues in the microelectronic packaging industry.Silver filled die attach is a typical adhesive used between the die and copper die pad for its improved heat dissipation capacity. Delamination between die attach and die pad will severely impact the heat conduction and result in product failure. In order to predict this delamination, interface properties should be characterized. Tri-material, copper-die attach-EMC, samples are made according to the package processes. A four point bending test system is established in order to perform delamination tests at different temperaturesusing a universal tester Zwick/Roell Z005. In addition, a Keyence optical system is mounted to capture a series of pictures during the delamination processes. This will provide the delamination geometry information needed for determining the interface properties. Four point bending tests have been performed at room temperature, 40, 60, 85, and 150C respectively. In addition pre conditioning sample arealso tested at room temperature and 85C respectively after 48 hours pre conditioned at 85C/85%RH. Experiments show that the critical delamination load decreases steadily with temperature increasing. Experiments also show moisture has no effects on the critical delamination load compared with the dry samples tested at the same temperatures. This meansthat moisture has no effects on the interface toughnessbetween copper and die attach. To quantify the interface properties, numerical simulations of the four point bending test have been performed by using a finite element model comprising cohesive zone elements which will describe the transient delamination process during the four point bending tests. Correspondently, the interface toughness decreases from 26.5 J/m2 at room temperature to 1.9 J/m2 at 150C as calculated from the cohesive zone element model. These results show that temperature has a large effect on theinterface toughness. By means of an extensive modelparameter sensitivity study, combined with the measureddelamination length in horizontal direction along the copper-die attach interface at room temperature critical opening value has been determined.
|Title of host publication||Proceedings of the 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSimE 2010), 26-28 April 2010, Bordeaux, France|
|Place of Publication||Piscataway|
|Publisher||Institute of Electrical and Electronics Engineers|
|Publication status||Published - 2010|