Diagnostics of the quality of MOSFETs

E.P. Vandamme; L.K.J. Vandamme

doi:10.1016/0026-2714(96)00059-5

Diagnostics of the quality of MOSFETs

E.P. Vandamme, L.K.J. Vandamme

Integrated Circuits

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Abstract

The excess noise behaviour of silicided p-channel MOSFETs is investigated. Due to contact problems, generation-recombination noise spectra are observed. Analysis of the current noise spectra versus the current on a single device, showed that the generation-recombination noise was due to trapping of carriers in the source and drain contacts. An analysis of an L-array is not necessary to distinguish between channel and contact contribution. The classical geometry and current dependence of the noise is no longer valid if the noise in the series resistance is dominant. Large generation-recombination noise components, with the dependence SI cx 14, point to poor device contact quality.

Original language	English
Pages (from-to)	1107-1112
Number of pages	6
Journal	Microelectronics Reliability
Volume	36
Issue number	7-8
DOIs	https://doi.org/10.1016/0026-2714(96)00059-5
Publication status	Published - 1996

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@article{2169bc36fd4949578bb387287ed6405b,

title = "Diagnostics of the quality of MOSFETs",

abstract = "The excess noise behaviour of silicided p-channel MOSFETs is investigated. Due to contact problems, generation-recombination noise spectra are observed. Analysis of the current noise spectra versus the current on a single device, showed that the generation-recombination noise was due to trapping of carriers in the source and drain contacts. An analysis of an L-array is not necessary to distinguish between channel and contact contribution. The classical geometry and current dependence of the noise is no longer valid if the noise in the series resistance is dominant. Large generation-recombination noise components, with the dependence SI cx 14, point to poor device contact quality.",

author = "E.P. Vandamme and L.K.J. Vandamme",

year = "1996",

doi = "10.1016/0026-2714(96)00059-5",

language = "English",

volume = "36",

pages = "1107--1112",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier",

number = "7-8",

}

TY - JOUR

T1 - Diagnostics of the quality of MOSFETs

AU - Vandamme, E.P.

AU - Vandamme, L.K.J.

PY - 1996

Y1 - 1996

N2 - The excess noise behaviour of silicided p-channel MOSFETs is investigated. Due to contact problems, generation-recombination noise spectra are observed. Analysis of the current noise spectra versus the current on a single device, showed that the generation-recombination noise was due to trapping of carriers in the source and drain contacts. An analysis of an L-array is not necessary to distinguish between channel and contact contribution. The classical geometry and current dependence of the noise is no longer valid if the noise in the series resistance is dominant. Large generation-recombination noise components, with the dependence SI cx 14, point to poor device contact quality.

AB - The excess noise behaviour of silicided p-channel MOSFETs is investigated. Due to contact problems, generation-recombination noise spectra are observed. Analysis of the current noise spectra versus the current on a single device, showed that the generation-recombination noise was due to trapping of carriers in the source and drain contacts. An analysis of an L-array is not necessary to distinguish between channel and contact contribution. The classical geometry and current dependence of the noise is no longer valid if the noise in the series resistance is dominant. Large generation-recombination noise components, with the dependence SI cx 14, point to poor device contact quality.

U2 - 10.1016/0026-2714(96)00059-5

DO - 10.1016/0026-2714(96)00059-5

M3 - Article

SN - 0026-2714

VL - 36

SP - 1107

EP - 1112

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 7-8

ER -

Diagnostics of the quality of MOSFETs

Abstract

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