Device Modeling and Characterization

Daniele Raiteri; Eugenio Cantatore; Arthur H.M. van Roermund

doi:10.1007/978-3-319-11427-9_4

Device Modeling and Characterization

Daniele Raiteri
, Eugenio Cantatore
, Arthur H.M. van Roermund

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic › peer-review

Abstract

Any reliable circuit designs is based on compact models able to describe accurately the behavior of the TFTs in a given technology. With our modeling, accurate simulation of analog circuits in a CAD platform is enabled and deeper insight in the underlying transport mechanisms is achieved. Thus, a physical model was developed in house that guarantees the continuity and the derivability among the different working regions, ensuring as well the symmetry between source and drain in the channel current. In this chapter, the implemented model will be explained first, and characterized afterwards.

Original language	English
Title of host publication	Analog Circuits and Signal Processing
Publisher	Springer
Pages	25-42
Number of pages	18
DOIs	https://doi.org/10.1007/978-3-319-11427-9_4
Publication status	Published - 2015

Publication series

Name	Analog Circuits and Signal Processing
ISSN (Print)	1872-082X
ISSN (Electronic)	2197-1854

Bibliographical note

Publisher Copyright:
© 2015, Springer International Publishing Switzerland.

Keywords

Localized Energy States
Reliable Circuit Design
Source-drain Current
Subthreshold Region
Underlying Transport Mechanism

Access to Document

10.1007/978-3-319-11427-9_4

Cite this

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KW - Localized Energy States

KW - Reliable Circuit Design

KW - Source-drain Current

KW - Subthreshold Region

KW - Underlying Transport Mechanism

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ER -

Device Modeling and Characterization

Abstract

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Keywords

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