Device engineering for high-performance, low-voltage operating organic field effect transistor on plastic substrate

G. Houin, F. Duez, L. Garcia, E. Cantatore, L. Hirsch, D. Belot, C. Pellet, M. Abbas

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)
54 Downloads (Pure)

Abstract

Various aspects in device engineering were tackled to realize a high-performance, low-voltage operating organic field effect transistor on plastic substrate. Contact resistance between the active layer and metal electrodes was decreased by employing oxide interfacial layers. The anodization of the Al gate served as a high capacitance dielectric layer enabling low-voltage operation of the devices. Several polymers were investigated in passivating the surface of the oxide dielectric to decrease the interfacial trap densities and to enhance surface smoothness. Finally, using these optimum conditions, devices on plastic substrate were fabricated which yielded mobility higher than 2 cm 2 V −1 s −1 without hysteresis, operating below 5 V, with the current on/off ratio higher than 10 6 and the prospect of various applications in organic electronics.
Original languageEnglish
Article number045004
Number of pages1
JournalFlexible and Printed Electronics
Volume2
Issue number4
DOIs
Publication statusPublished - 2017

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Organic field effect transistors
Oxides
Plastics
Electric potential
Substrates
Contact resistance
Hysteresis
Polymers
Capacitance
Electronic equipment
Metals
Electrodes

Cite this

Houin, G. ; Duez, F. ; Garcia, L. ; Cantatore, E. ; Hirsch, L. ; Belot, D. ; Pellet, C. ; Abbas, M. / Device engineering for high-performance, low-voltage operating organic field effect transistor on plastic substrate. In: Flexible and Printed Electronics. 2017 ; Vol. 2, No. 4.
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Device engineering for high-performance, low-voltage operating organic field effect transistor on plastic substrate. / Houin, G.; Duez, F.; Garcia, L.; Cantatore, E.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

In: Flexible and Printed Electronics, Vol. 2, No. 4, 045004, 2017.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Houin, G.

AU - Duez, F.

AU - Garcia, L.

AU - Cantatore, E.

AU - Hirsch, L.

AU - Belot, D.

AU - Pellet, C.

AU - Abbas, M.

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AB - Various aspects in device engineering were tackled to realize a high-performance, low-voltage operating organic field effect transistor on plastic substrate. Contact resistance between the active layer and metal electrodes was decreased by employing oxide interfacial layers. The anodization of the Al gate served as a high capacitance dielectric layer enabling low-voltage operation of the devices. Several polymers were investigated in passivating the surface of the oxide dielectric to decrease the interfacial trap densities and to enhance surface smoothness. Finally, using these optimum conditions, devices on plastic substrate were fabricated which yielded mobility higher than 2 cm 2 V −1 s −1 without hysteresis, operating below 5 V, with the current on/off ratio higher than 10 6 and the prospect of various applications in organic electronics.

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