Development of a modeling platform for 4.5 kV IGBT power modules

Georgios E. Sfakianakis; Muhammad Nawaz

doi:10.1109/IECON.2014.7048687

Development of a modeling platform for 4.5 kV IGBT power modules

Georgios E. Sfakianakis, Muhammad Nawaz

Electromechanics and Power Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

Abstract

This paper deals with the development of a PSpice based evaluation platform for high power IGBT devices. The purpose of this platform is to provide useful information for the design and the assessment of converter cells for potential high power applications. An extended version of Hefner model is presented for high power, high voltage IGBTs taking into account temperature variation. A parametric analysis is presented in order to depict the effect of each parameter in the model. A set of parameters have been extracted and then verified with static and dynamic comparison of experimental data from 4.5 kV and 2.0 kA Si based IGBT power module (StakPak). Finally, an overall energy loss estimation is presented as function of temperature, load current and collector-emitter voltage.

Original language	English
Title of host publication	IECON Proceedings (Industrial Electronics Conference)
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1416-1422
Number of pages	7
ISBN (Electronic)	9781479940325
DOIs	https://doi.org/10.1109/IECON.2014.7048687
Publication status	Published - 24 Feb 2014

Keywords

Device Modeling
IGBTs
Power Semiconductor Modules
Semiconductor Devices
Spice Modeling

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10.1109/IECON.2014.7048687

Cite this

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title = "Development of a modeling platform for 4.5 kV IGBT power modules",

abstract = "This paper deals with the development of a PSpice based evaluation platform for high power IGBT devices. The purpose of this platform is to provide useful information for the design and the assessment of converter cells for potential high power applications. An extended version of Hefner model is presented for high power, high voltage IGBTs taking into account temperature variation. A parametric analysis is presented in order to depict the effect of each parameter in the model. A set of parameters have been extracted and then verified with static and dynamic comparison of experimental data from 4.5 kV and 2.0 kA Si based IGBT power module (StakPak). Finally, an overall energy loss estimation is presented as function of temperature, load current and collector-emitter voltage.",

keywords = "Device Modeling, IGBTs, Power Semiconductor Modules, Semiconductor Devices, Spice Modeling",

author = "Sfakianakis, {Georgios E.} and Muhammad Nawaz",

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doi = "10.1109/IECON.2014.7048687",

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Development of a modeling platform for 4.5 kV IGBT power modules. / Sfakianakis, Georgios E.; Nawaz, Muhammad.
IECON Proceedings (Industrial Electronics Conference). Piscataway: Institute of Electrical and Electronics Engineers, 2014. p. 1416-1422 7048687.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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N2 - This paper deals with the development of a PSpice based evaluation platform for high power IGBT devices. The purpose of this platform is to provide useful information for the design and the assessment of converter cells for potential high power applications. An extended version of Hefner model is presented for high power, high voltage IGBTs taking into account temperature variation. A parametric analysis is presented in order to depict the effect of each parameter in the model. A set of parameters have been extracted and then verified with static and dynamic comparison of experimental data from 4.5 kV and 2.0 kA Si based IGBT power module (StakPak). Finally, an overall energy loss estimation is presented as function of temperature, load current and collector-emitter voltage.

AB - This paper deals with the development of a PSpice based evaluation platform for high power IGBT devices. The purpose of this platform is to provide useful information for the design and the assessment of converter cells for potential high power applications. An extended version of Hefner model is presented for high power, high voltage IGBTs taking into account temperature variation. A parametric analysis is presented in order to depict the effect of each parameter in the model. A set of parameters have been extracted and then verified with static and dynamic comparison of experimental data from 4.5 kV and 2.0 kA Si based IGBT power module (StakPak). Finally, an overall energy loss estimation is presented as function of temperature, load current and collector-emitter voltage.

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KW - IGBTs

KW - Power Semiconductor Modules

KW - Semiconductor Devices

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BT - IECON Proceedings (Industrial Electronics Conference)

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Development of a modeling platform for 4.5 kV IGBT power modules

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Keywords

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