Development of a modeling platform for 4.5 kV IGBT power modules

Georgios E. Sfakianakis, Muhammad Nawaz

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)


This paper deals with the development of a PSpice based evaluation platform for high power IGBT devices. The purpose of this platform is to provide useful information for the design and the assessment of converter cells for potential high power applications. An extended version of Hefner model is presented for high power, high voltage IGBTs taking into account temperature variation. A parametric analysis is presented in order to depict the effect of each parameter in the model. A set of parameters have been extracted and then verified with static and dynamic comparison of experimental data from 4.5 kV and 2.0 kA Si based IGBT power module (StakPak). Finally, an overall energy loss estimation is presented as function of temperature, load current and collector-emitter voltage.

Original languageEnglish
Title of host publicationIECON Proceedings (Industrial Electronics Conference)
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages7
ISBN (Electronic)9781479940325
Publication statusPublished - 24 Feb 2014


  • Device Modeling
  • IGBTs
  • Power Semiconductor Modules
  • Semiconductor Devices
  • Spice Modeling


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