Deterministic self-organization : Ordered positioning of InAs quantum dots by self-organized anisotropic strain engineering on patterned GaAs (311)B

E. Selçuk, G.J. Hamhuis, R. Nötzel

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Laterally ordered InGaAs quantum dot (QD) arrays, InAs QD molecules, and single InAs QDs in a spot-like periodic arrangement are created by self-organized anisotropic strain engineering of InGaAs/GaAs superlattice (SL) templates on planar GaAs (311)B substrates in molecular beam epitaxy. On shallow- and deep-patterned substrates the respectively generated steps and facets guide the self-organization process during SL template formation to create more complex ordering such as periodic stripes, depending on pattern design. Here we demonstrate for patterns such as shallow- and deepetched round holes and deep-etched zigzag mesas that the self-organized periodic arrangement of QD molecules and single QDs is spatially locked to the pattern sidewalls and corners. This extends the concept of guided self-organization to deterministic self-organization. Absolute position control of the QDs is achieved without one-to-one pattern definition. This guarantees the excellent arrangement control of the ordered QD molecules and single QDs with strong photoluminescence emission up to room temperature, which is required for future quantum functional devices. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish
Title of host publicationProceedings of the 35th International Symposium on Compound Semiconductors (ISCS 2008), 21-24 September 2008, Rust, Germany
Place of PublicationWeinheim
PublisherWiley
Pages1453-1455
DOIs
Publication statusPublished - 2009
Eventconference; ISCS 2008 -
Duration: 1 Jan 2009 → …

Publication series

NamePhysica Status Solidi C: Conferences
Volume6
ISSN (Print)1610-1634

Conference

Conferenceconference; ISCS 2008
Period1/01/09 → …
OtherISCS 2008

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    Selçuk, E., Hamhuis, G. J., & Nötzel, R. (2009). Deterministic self-organization : Ordered positioning of InAs quantum dots by self-organized anisotropic strain engineering on patterned GaAs (311)B. In Proceedings of the 35th International Symposium on Compound Semiconductors (ISCS 2008), 21-24 September 2008, Rust, Germany (pp. 1453-1455). (Physica Status Solidi C: Conferences; Vol. 6). Wiley. https://doi.org/10.1002/pssc.200881508