Determination of the strain status of GaAs/AlAs quantum wires and quantum dots

A.A. Darhuber, G. Bauer, P.D. Wang, Y.P. Song, C.M. Sotomayor Torres, M.C. Holland

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


    We have investigated periodic arrays of 150 and 175 nm wide GaAs-AlAs quantum wires and quantum dots, fabricated by electron beam lithography and SiCI4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry (TAD). The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots.
    Original languageEnglish
    Title of host publicationPolymer/inorganic interfaces : symposium, 2nd, held April 18-20, 1995, San Francisco, California, U.S.A.
    EditorsL.T. Drzal
    Place of PublicationPittsburgh
    PublisherMaterials Research Society
    ISBN (Print)1-55899-288-X
    Publication statusPublished - 1995

    Publication series

    NameMaterials Research Society symposium proceedings
    ISSN (Print)0272-9172


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