@inproceedings{ed0fca0250a14dafa3ae40cb28c09751,
title = "Determination of the strain status of GaAs/AlAs quantum wires and quantum dots",
abstract = "We have investigated periodic arrays of 150 and 175 nm wide GaAs-AlAs quantum wires and quantum dots, fabricated by electron beam lithography and SiCI4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry (TAD). The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots.",
author = "A.A. Darhuber and G. Bauer and P.D. Wang and Y.P. Song and {Sotomayor Torres}, C.M. and M.C. Holland",
year = "1995",
doi = "10.1557/PROC-358-975",
language = "English",
isbn = "1-55899-288-X ",
series = "Materials Research Society symposium proceedings",
publisher = "Materials Research Society",
pages = "975--980",
editor = "L.T. Drzal",
booktitle = "Polymer/inorganic interfaces : symposium, 2nd, held April 18-20, 1995, San Francisco, California, U.S.A.",
address = "United States",
}