Determination of the strain status of GaAs/AlAs quantum wires and quantum dots

A.A. Darhuber, G. Bauer, P.D. Wang, Y.P. Song, C.M. Sotomayor Torres, M.C. Holland

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We have investigated periodic arrays of 150 and 175 nm wide GaAs-AlAs quantum wires and quantum dots, fabricated by electron beam lithography and SiCI4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry (TAD). The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots.
Original languageEnglish
Title of host publicationPolymer/inorganic interfaces : symposium, 2nd, held April 18-20, 1995, San Francisco, California, U.S.A.
EditorsL.T. Drzal
Place of PublicationPittsburgh
PublisherMaterials Research Society
Pages975-980
ISBN (Print)1-55899-288-X
DOIs
Publication statusPublished - 1995

Publication series

NameMaterials Research Society symposium proceedings
Volume385
ISSN (Print)0272-9172

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