We have investigated periodic arrays of 150 and 175 nm wide GaAs-AlAs quantum wires and quantum dots, fabricated by electron beam lithography and SiCI4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry (TAD). The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots.
|Title of host publication||Polymer/inorganic interfaces : symposium, 2nd, held April 18-20, 1995, San Francisco, California, U.S.A.|
|Place of Publication||Pittsburgh|
|Publisher||Materials Research Society|
|ISBN (Print)||1-55899-288-X |
|Publication status||Published - 1995|
|Name||Materials Research Society symposium proceedings|