Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

D.M. Bruls; J.W.A.M. Vugs; P.M. Koenraad; H.W.M. Salemink; J.H. Wolter; M. Hopkinson; M.S. Skolnick; Fei Long; S.P.A. Gill

doi:10.1063/1.1504162

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

D.M. Bruls, J.W.A.M. Vugs, P.M. Koenraad, H.W.M. Salemink, J.H. Wolter, M. Hopkinson, M.S. Skolnick, Fei Long, S.P.A. Gill

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Abstract

We present a cross-sectional scanning-tunneling microscopy investigation of the shape, size, and composition of InAs quantum dots in a GaAs matrix, grown by molecular beam epitaxy at low growth rate. From the dimensional analysis we conclude that the investigated quantum dots have an average height of 5 nm, a square base of 18 nm oriented along [010] and [100] and the shape of a truncated pyramid. From outward relaxation and lattice constant profiles we conclude that the dots consist of an InGaAs alloy and that the indium concentration increases linearly in the growth direction. Our results justify the predictions obtained from previous photocurrent measurements on similar structures and the used theoretical model

Original language	English
Pages (from-to)	1708-1710
Journal	Applied Physics Letters
Volume	81
Issue number	9
DOIs	https://doi.org/10.1063/1.1504162
Publication status	Published - 2002

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title = "Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy",

abstract = "We present a cross-sectional scanning-tunneling microscopy investigation of the shape, size, and composition of InAs quantum dots in a GaAs matrix, grown by molecular beam epitaxy at low growth rate. From the dimensional analysis we conclude that the investigated quantum dots have an average height of 5 nm, a square base of 18 nm oriented along [010] and [100] and the shape of a truncated pyramid. From outward relaxation and lattice constant profiles we conclude that the dots consist of an InGaAs alloy and that the indium concentration increases linearly in the growth direction. Our results justify the predictions obtained from previous photocurrent measurements on similar structures and the used theoretical model",

author = "D.M. Bruls and J.W.A.M. Vugs and P.M. Koenraad and H.W.M. Salemink and J.H. Wolter and M. Hopkinson and M.S. Skolnick and Fei Long and S.P.A. Gill",

year = "2002",

doi = "10.1063/1.1504162",

language = "English",

volume = "81",

pages = "1708--1710",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

AU - Bruls, D.M.

AU - Vugs, J.W.A.M.

AU - Koenraad, P.M.

AU - Salemink, H.W.M.

AU - Wolter, J.H.

AU - Hopkinson, M.

AU - Skolnick, M.S.

AU - Long, Fei

AU - Gill, S.P.A.

PY - 2002

Y1 - 2002

N2 - We present a cross-sectional scanning-tunneling microscopy investigation of the shape, size, and composition of InAs quantum dots in a GaAs matrix, grown by molecular beam epitaxy at low growth rate. From the dimensional analysis we conclude that the investigated quantum dots have an average height of 5 nm, a square base of 18 nm oriented along [010] and [100] and the shape of a truncated pyramid. From outward relaxation and lattice constant profiles we conclude that the dots consist of an InGaAs alloy and that the indium concentration increases linearly in the growth direction. Our results justify the predictions obtained from previous photocurrent measurements on similar structures and the used theoretical model

AB - We present a cross-sectional scanning-tunneling microscopy investigation of the shape, size, and composition of InAs quantum dots in a GaAs matrix, grown by molecular beam epitaxy at low growth rate. From the dimensional analysis we conclude that the investigated quantum dots have an average height of 5 nm, a square base of 18 nm oriented along [010] and [100] and the shape of a truncated pyramid. From outward relaxation and lattice constant profiles we conclude that the dots consist of an InGaAs alloy and that the indium concentration increases linearly in the growth direction. Our results justify the predictions obtained from previous photocurrent measurements on similar structures and the used theoretical model

U2 - 10.1063/1.1504162

DO - 10.1063/1.1504162

M3 - Article

SN - 0003-6951

VL - 81

SP - 1708

EP - 1710

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

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