Detection of surface accumulation of dopants in rapid-thermally-annealed, shallow-implant silicon

P. J. Scanlon, M. C. Ridgway, H. H. Brongersma

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6 Citations (Scopus)

Abstract

Rapid thermal annealing (RTA) of ion-implanted silicon is a procedure for annealing the damage caused by implantation while minimizing the redistribution of the implanted dopant species. The accumulation of dopant atoms at interfaces and at the surface as a result of the annealing can have significant effects on the electrical properties of the material. We have studied the surface accumulation of B and Sb implanted at low energy into silicon (with a subsequent RTA cycle) by using low-energy ion scattering, nuclear reaction analysis, and Rutherford backscattering. The use of these complementary techniques has enabled the confirmation of the presence of surface accumulation of dopant material in each case. Each technique leads to different specific information.

Original languageEnglish
Pages (from-to)615-617
Number of pages3
JournalNuclear Inst. and Methods in Physics Research, B
Volume45
Issue number1-4
DOIs
Publication statusPublished - 2 Jan 1990

Bibliographical note

Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.

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