Detection of SiH3 radicals and cluster formation in a highly H2 diluted SiH4 VHF plasma by means of time resolved cavity ring down spectroscopy

Takehiko Nagai, A.H.M. Smets, M. Kondo

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Abstract

The spatial distribution of the SiH3 radicals between the electrodes of a H dild. silane VHF plasma under thin film hydrogenated microcryst. Si (micro c-Si:H) growth conditions was measured using the time resolved cavity ring-down (t-CRD) absorption spectroscopy technique. The micro c-Si:H growth rate is estd. from the measured spatial SiH3 profiles using a simple model based upon diffusion controlled flux of SiH3 radicals to the electrode surface, where the SiH3 can react with the film surface. The calcd. value of micro c-Si:H growth rate roughly agrees with the value of the exptl. detd. growth rate. This agreement implies that the SiH3 radical is the main growth contributor to the micro c-Si:H growth. Also, the t-CRD reveals the growth kinetics of the clusters in the plasma by light scattering at these clusters on time scales of 1 s after the plasma ignition. [on SciFinder (R)]
Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006
PublisherMaterials Research Society
Pages219-224
Publication statusPublished - 2007

Publication series

NameMaterials Research Society Symposium Proceedings
Volume910
ISSN (Print)0272-9172

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