Design trade-offs in amorphous indium gallium zinc oxide thin film transistor based bio-signal sensing front-ends

Mohammad Zulqarnain (Corresponding author), Stefano Stanzione, Jan Laurens P.J. van der Steen, Gerwin Gelinck, Sahel Abdinia, Eugenio Cantatore

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)
343 Downloads (Pure)


With the advent of the Internet of things, wearable sensing devices are gaining importance in our daily lives for applications like vital signal monitoring during sport and health diagnostics. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) fabricated on flexible large-area substrates are a very interesting platform to build wearable sensing devices due to their flexibility, conformability to the human body, and low cost. For this paper four different bio-signal sensing front-end circuits based on a-IGZO TFTs are designed, fabricated, measured and compared, focusing on three performance indicators which are in a trade-off: power efficiency factor (PEF), area occupation and input impedance. Considering a 200 Hz bandwidth, the measured PEF varies between 4.7 × 105 and 7.5 × 106. The area occupation spans from 4.2 to 37 mm2, while the input impedance at 1 Hz varies from 5.3 to 55.3 MΩ. The front-ends based on diode-load amplifiers are compact but have the lowest input impedance and need external capacitors; a front-end exploiting positive feedback impedance boosting has the highest input impedance and is fully integrated on foil, but occupies the largest area.
Original languageEnglish
Article number014001
Number of pages12
JournalFlexible and Printed Electronics
Issue number1
Publication statusPublished - 9 Jan 2019


  • bio-signal sensing front-end
  • indium gallium zinc oxide
  • input impedance
  • low noise
  • thin film transistor


Dive into the research topics of 'Design trade-offs in amorphous indium gallium zinc oxide thin film transistor based bio-signal sensing front-ends'. Together they form a unique fingerprint.

Cite this