Design paradigm of 30dBm power amplifier in SiGe

R. Mahmoudi; J.A.J. Essing; D.M.W. Leenaerts

Design paradigm of 30dBm power amplifier in SiGe

R. Mahmoudi, J.A.J. Essing, D.M.W. Leenaerts

Research output: Contribution to conference › Other › Academic

Original language	English
Number of pages	42
Publication status	Published - 2012
Event	Towards Watt-Level mm-Wave Efficient Silicon Power Amplifiers, June 17, 2012, Montréal, Canada - Montréal, Canada Duration: 17 Jun 2012 → 17 Jun 2012

Workshop

Workshop	Towards Watt-Level mm-Wave Efficient Silicon Power Amplifiers, June 17, 2012, Montréal, Canada
Country/Territory	Canada
City	Montréal
Period	17/06/12 → 17/06/12
Other	Workshop held at 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012)

Cite this

@conference{1a9b7fdde19e47789026f02429d29f27,

title = "Design paradigm of 30dBm power amplifier in SiGe",

author = "R. Mahmoudi and J.A.J. Essing and D.M.W. Leenaerts",

year = "2012",

language = "English",

note = "Towards Watt-Level mm-Wave Efficient Silicon Power Amplifiers, June 17, 2012, Montr{\'e}al, Canada ; Conference date: 17-06-2012 Through 17-06-2012",

}