Design of monolithically integrated InGaAsP/InP passively-modelocked linear quantum well lasers in an active-passive integration scheme

V. Moskalenko, A. Pellacani, J. Javaloyes, M.K. Smit, E.A.J.M. Bente

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

134 Downloads (Pure)

Abstract

In this paper simulation results of Fabry-Perot mode-locked lasers are presented that are based on measured modal gain data of InGaAsP quantum well optical amplifiers. Gain spectra were measured for various values of injected current density. The gain spectra were fitted to an analytical formula to describe the spectra using a few parameters. These were used as input parameters in a series of simulations of mode-locked lasers. The performance of three-section passively mode-locked lasers (amplifier, saturable absorber and passive waveguide) was studied for various lengths of the absorber and passive waveguide sections as well as various reflectivity values of the resonator mirrors.
Original languageEnglish
Title of host publicationProceedings of the 2012 Annual Symposium of the IEEE Photonics Society Benelux Chapter, 29-30 November 2012, Mons, Belgium
EditorsM. Wuilpart, C. Caucheteur, M. Mura
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages283-286
ISBN (Print)978-2-8052-0184-4
Publication statusPublished - 2012

Fingerprint Dive into the research topics of 'Design of monolithically integrated InGaAsP/InP passively-modelocked linear quantum well lasers in an active-passive integration scheme'. Together they form a unique fingerprint.

Cite this