Design of InGaAs/InP quantum wells for applications at 1550 nm : a realistic quantum well model including interface layers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Original language	English
Title of host publication	Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998
Editors	P. Demeester, R. Baets, A. Ackaert, V. Masquelin
Place of Publication	Gent
Publisher	University of Gent
Pages	133-136
ISBN (Print)	90-76546-01-0
Publication status	Published - 1998

Cite this

Dorren, B. H. P., Silov, A. Y., Leijs, M. R., Haverkort, J. E. M., & Wolter, J. H. (1998). Design of InGaAs/InP quantum wells for applications at 1550 nm : a realistic quantum well model including interface layers. In P. Demeester, R. Baets, A. Ackaert, & V. Masquelin (Eds.), Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998 (pp. 133-136). University of Gent.

Dorren, B.H.P. ; Silov, A.Y. ; Leijs, M.R. et al. / Design of InGaAs/InP quantum wells for applications at 1550 nm : a realistic quantum well model including interface layers. Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998. editor / P. Demeester ; R. Baets ; A. Ackaert ; V. Masquelin. Gent : University of Gent, 1998. pp. 133-136

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title = "Design of InGaAs/InP quantum wells for applications at 1550 nm : a realistic quantum well model including interface layers",

author = "B.H.P. Dorren and A.Y. Silov and M.R. Leijs and J.E.M. Haverkort and J.H. Wolter",

year = "1998",

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Dorren, BHP, Silov, AY, Leijs, MR, Haverkort, JEM & Wolter, JH 1998, Design of InGaAs/InP quantum wells for applications at 1550 nm : a realistic quantum well model including interface layers. in P Demeester, R Baets, A Ackaert & V Masquelin (eds), Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998. University of Gent, Gent, pp. 133-136.

Design of InGaAs/InP quantum wells for applications at 1550 nm : a realistic quantum well model including interface layers. / Dorren, B.H.P.; Silov, A.Y.; Leijs, M.R. et al.
Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998. ed. / P. Demeester; R. Baets; A. Ackaert; V. Masquelin. Gent: University of Gent, 1998. p. 133-136.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Design of InGaAs/InP quantum wells for applications at 1550 nm : a realistic quantum well model including interface layers

AU - Dorren, B.H.P.

AU - Silov, A.Y.

AU - Leijs, M.R.

AU - Haverkort, J.E.M.

AU - Wolter, J.H.

PY - 1998

Y1 - 1998

M3 - Conference contribution

SN - 90-76546-01-0

SP - 133

EP - 136

BT - Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998

A2 - Demeester, P.

A2 - Baets, R.

A2 - Ackaert, A.

A2 - Masquelin, V.

PB - University of Gent

CY - Gent

ER -

Dorren BHP, Silov AY, Leijs MR, Haverkort JEM, Wolter JH. Design of InGaAs/InP quantum wells for applications at 1550 nm : a realistic quantum well model including interface layers. In Demeester P, Baets R, Ackaert A, Masquelin V, editors, Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998. Gent: University of Gent. 1998. p. 133-136