Design of composite InAsP/InGaAs quantum wells for a 1.55 mu-m polarization independent semiconductor optical amplifier

J.E.M. Haverkort; B.H.P. Dorren; M. Kemerink; A.Y. Silov; J.H. Wolter

doi:10.1063/1.125148

Design of composite InAsP/InGaAs quantum wells for a 1.55 mu-m polarization independent semiconductor optical amplifier

J.E.M. Haverkort, B.H.P. Dorren, M. Kemerink, A.Y. Silov, J.H. Wolter

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Abstract

We investigate a composite InAsP/InGaAs quantum well in which an 8 nm tensile strained InGaAs well is surrounded by two compressively strained InAsP layers which feature a 70:30 conduction band offset ratio. The composite quantum well is found to provide a high TM differential gain. The InAsP layers provide strain compensation while simultaneously shifting the band gap to the relevant 1.55 µm wavelength region and increasing the electron confinement. Composite InAsP/InGaAs quantum wells are a promising candidate for realizing a polarization independent semiconductor optical amplifier at 1.55 µm.

Original language	English
Pages (from-to)	2782-2784
Number of pages	2782
Journal	Applied Physics Letters
Volume	75
Issue number	18
DOIs	https://doi.org/10.1063/1.125148
Publication status	Published - 1999

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abstract = "We investigate a composite InAsP/InGaAs quantum well in which an 8 nm tensile strained InGaAs well is surrounded by two compressively strained InAsP layers which feature a 70:30 conduction band offset ratio. The composite quantum well is found to provide a high TM differential gain. The InAsP layers provide strain compensation while simultaneously shifting the band gap to the relevant 1.55 µm wavelength region and increasing the electron confinement. Composite InAsP/InGaAs quantum wells are a promising candidate for realizing a polarization independent semiconductor optical amplifier at 1.55 µm.",

author = "J.E.M. Haverkort and B.H.P. Dorren and M. Kemerink and A.Y. Silov and J.H. Wolter",

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AU - Haverkort, J.E.M.

AU - Dorren, B.H.P.

AU - Kemerink, M.

AU - Silov, A.Y.

AU - Wolter, J.H.

PY - 1999

Y1 - 1999

N2 - We investigate a composite InAsP/InGaAs quantum well in which an 8 nm tensile strained InGaAs well is surrounded by two compressively strained InAsP layers which feature a 70:30 conduction band offset ratio. The composite quantum well is found to provide a high TM differential gain. The InAsP layers provide strain compensation while simultaneously shifting the band gap to the relevant 1.55 µm wavelength region and increasing the electron confinement. Composite InAsP/InGaAs quantum wells are a promising candidate for realizing a polarization independent semiconductor optical amplifier at 1.55 µm.

AB - We investigate a composite InAsP/InGaAs quantum well in which an 8 nm tensile strained InGaAs well is surrounded by two compressively strained InAsP layers which feature a 70:30 conduction band offset ratio. The composite quantum well is found to provide a high TM differential gain. The InAsP layers provide strain compensation while simultaneously shifting the band gap to the relevant 1.55 µm wavelength region and increasing the electron confinement. Composite InAsP/InGaAs quantum wells are a promising candidate for realizing a polarization independent semiconductor optical amplifier at 1.55 µm.

U2 - 10.1063/1.125148

DO - 10.1063/1.125148

M3 - Article

VL - 75

SP - 2782

EP - 2784

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

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