Abstract
We investigate a composite InAsP/InGaAs quantum well in which an 8 nm tensile strained InGaAs well is surrounded by two compressively strained InAsP layers which feature a 70:30 conduction band offset ratio. The composite quantum well is found to provide a high TM differential gain. The InAsP layers provide strain compensation while simultaneously shifting the band gap to the relevant 1.55 µm wavelength region and increasing the electron confinement. Composite InAsP/InGaAs quantum wells are a promising candidate for realizing a polarization independent semiconductor optical amplifier at 1.55 µm.
Original language | English |
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Pages (from-to) | 2782-2784 |
Number of pages | 2782 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 18 |
DOIs | |
Publication status | Published - 1999 |