Design of composite InAsP/InGaAs quantum wells for a 1.55 mu-m polarization independent semiconductor optical amplifier

J.E.M. Haverkort, B.H.P. Dorren, M. Kemerink, A.Y. Silov, J.H. Wolter

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Abstract

We investigate a composite InAsP/InGaAs quantum well in which an 8 nm tensile strained InGaAs well is surrounded by two compressively strained InAsP layers which feature a 70:30 conduction band offset ratio. The composite quantum well is found to provide a high TM differential gain. The InAsP layers provide strain compensation while simultaneously shifting the band gap to the relevant 1.55 µm wavelength region and increasing the electron confinement. Composite InAsP/InGaAs quantum wells are a promising candidate for realizing a polarization independent semiconductor optical amplifier at 1.55 µm.
Original languageEnglish
Pages (from-to)2782-2784
Number of pages2782
JournalApplied Physics Letters
Volume75
Issue number18
DOIs
Publication statusPublished - 1999

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