Design of a Uni-Traveling-Carrier (UTC) photodetector in InP Membrane on Silicon (IMOS)

L. Shen, J.J.G.M. Tol, van der, G. Roelkens, M.K. Smit

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)
3 Downloads (Pure)

Abstract

InP Membrane on Silicon (IMOS) technology provides a new platform for integrating a full set of photonic components on top of CMOS chips. In this paper, a design of a uni-traveling-carrier photodetector in this platform is presented. Optical simulations have been performed to determine both the coupling loss and the metal loss. Electrical simulations have also been performed to optimize the RC constant and the transit time. The simulation shows that a bandwidth beyond 100 GHz with a responsivity of 0.8 A/W can be achieved. This provides promising integrated solutions for ultrafast optical interconnects and microwave applications.
Original languageEnglish
Title of host publicationProceedings of the 18th Annual Symposium of the IEEE Photonics Benelux Chapter, 25-16 November 2013, Eindhoven, The Netherlands
Pages211-214
Publication statusPublished - 2013
Event18th Annual Symposium of the IEEE Photonics Benelux Chapter - Eindhoven, Netherlands
Duration: 25 Nov 201326 Nov 2013
http://www.photonics-benelux.org/symp13/

Conference

Conference18th Annual Symposium of the IEEE Photonics Benelux Chapter
CountryNetherlands
CityEindhoven
Period25/11/1326/11/13
Internet address

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