Abstract
We present a simple and novel apparatus for growth of carbon nanotubes (CNTs) by chemical vapour deposition (CVD) using a resistively heated silicon substrate. The substrate is suspended in the gas flow, resulting in low thermal mass and enabling rapid continuous control of the substrate temperature: heating and cooling rates of 100°C/s are achieved. The separation of gas (pre-) heating temperature and substrate temperature results in much improved growth rate and ultimate length of vertically aligned multi-walled nanotubes (VA-CNT) compared to a conventional setup using a tube furnace. Using optical photography we monitor the height and morphology of VA-CNT films as they grow, revealing a constant growth rate in experiments at 800°C in C2H4/H2/Ar and C2H4/H2/CO.
Original language | English |
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Title of host publication | Proceedings of the 6th International Conference European Society for Precision Engineering and Nanotechnology, EUSPEN 2006 |
Editors | H. Zervos |
Place of Publication | Bedford |
Publisher | European Society for Precision Engineering and Nanotechnology |
Pages | 381-384 |
Number of pages | 4 |
ISBN (Print) | 9780955308208, 0-9553082-0-8 |
Publication status | Published - 2006 |
Externally published | Yes |
Event | 6th International Conference of the European Society for Precision Engineering and Nanotechnology (EUSPEN 2006) - Baden bei Wien, Austria Duration: 28 May 2006 → 1 Jun 2006 Conference number: 6 |
Conference
Conference | 6th International Conference of the European Society for Precision Engineering and Nanotechnology (EUSPEN 2006) |
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Abbreviated title | EUSPEN 2006 |
Country/Territory | Austria |
City | Baden bei Wien |
Period | 28/05/06 → 1/06/06 |