Design of a suspended silicon substrate heater and its application to novel studies of carbon nanotube growth

L.C. van Laake, A.J. Hart, A.H. Slocum

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We present a simple and novel apparatus for growth of carbon nanotubes (CNTs) by chemical vapour deposition (CVD) using a resistively heated silicon substrate. The substrate is suspended in the gas flow, resulting in low thermal mass and enabling rapid continuous control of the substrate temperature: heating and cooling rates of 100°C/s are achieved. The separation of gas (pre-) heating temperature and substrate temperature results in much improved growth rate and ultimate length of vertically aligned multi-walled nanotubes (VA-CNT) compared to a conventional setup using a tube furnace. Using optical photography we monitor the height and morphology of VA-CNT films as they grow, revealing a constant growth rate in experiments at 800°C in C2H4/H2/Ar and C2H4/H2/CO.

Original languageEnglish
Title of host publicationProceedings of the 6th International Conference European Society for Precision Engineering and Nanotechnology, EUSPEN 2006
EditorsH. Zervos
Place of PublicationBedford
PublisherEuropean Society for Precision Engineering and Nanotechnology
Pages381-384
Number of pages4
ISBN (Print)9780955308208, 0-9553082-0-8
Publication statusPublished - 2006
Externally publishedYes
Event6th International Conference of the European Society for Precision Engineering and Nanotechnology (EUSPEN 2006) - Baden bei Wien, Austria
Duration: 28 May 20061 Jun 2006
Conference number: 6

Conference

Conference6th International Conference of the European Society for Precision Engineering and Nanotechnology (EUSPEN 2006)
Abbreviated titleEUSPEN 2006
Country/TerritoryAustria
CityBaden bei Wien
Period28/05/061/06/06

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