Design of a monolithic integrable differential polarization phase shifter using an optimized InGaAsP strained multi-quantum well layer stack

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

14 Downloads (Pure)

Abstract

Polarization handling devices are essential elements in photonic integrated circuits. In this paper, a phase shifter for applying different phase shift on transverse electric (TE) and transverse magnetic (TM) modes is presented. By optimizing a strain-enhanced InGaAsP multiquantum well structure the birefringence is increased and the phase shift between TE and TM modes is enlarged. The simulation results indicate that with a low driving voltage of 2 V and a small length of 2 mm, a 2π phase shift difference between TE and TM modes over 100 nm wavelength around the c-band is achieved.

Original languageEnglish
Title of host publicationIntegrated Optics
Subtitle of host publicationDevices, Materials, and Technologies XXVIII
EditorsSonia M. Garcia-Blanco, Pavel Cheben
PublisherSPIE
Number of pages5
ISBN (Electronic)9781510670396
ISBN (Print)9781510670389
DOIs
Publication statusPublished - 12 Mar 2024
EventIntegrated Optics: Devices, Materials, and Technologies XXVIII 2024 - San Francisco, United States
Duration: 29 Jan 20241 Feb 2024

Publication series

NameProceedings of SPIE
Volume12889
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceIntegrated Optics: Devices, Materials, and Technologies XXVIII 2024
Country/TerritoryUnited States
CitySan Francisco
Period29/01/241/02/24

Keywords

  • multi quantum well
  • Polarization controller
  • polarization phase shifter
  • quantum confined stark effect

Fingerprint

Dive into the research topics of 'Design of a monolithic integrable differential polarization phase shifter using an optimized InGaAsP strained multi-quantum well layer stack'. Together they form a unique fingerprint.

Cite this