This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described in this article. The RF transistors and biasing circuitry are implemented in silicon bipolar technology. A multi-layer LTCC substrate is used as carrier.
|Title of host publication||Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers|
|Editors||J.H. Huijsing, M. Steyaert, A.H.M. Roermund, van|
|Place of Publication||Dordrecht|
|Publisher||Kluwer Academic Publishers|
|Number of pages||20|
|ISBN (Print)||0-7923-7621-8, 978-0-7923-7621-7|
|Publication status||Published - 2002|