Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

P.G.M. Baltus, A. Bezooijen, van

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Abstract

This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described in this article. The RF transistors and biasing circuitry are implemented in silicon bipolar technology. A multi-layer LTCC substrate is used as carrier.
Original languageEnglish
Title of host publicationAnalog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers
EditorsJ.H. Huijsing, M. Steyaert, A.H.M. Roermund, van
Place of PublicationDordrecht
PublisherKluwer Academic Publishers
Pages249-268
Number of pages20
ISBN (Print)0-7923-7621-8, 978-0-7923-7621-7
DOIs
Publication statusPublished - 2002

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Baltus, P. G. M., & Bezooijen, van, A. (2002). Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module. In J. H. Huijsing, M. Steyaert, & A. H. M. Roermund, van (Eds.), Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers (pp. 249-268). Dordrecht: Kluwer Academic Publishers. https://doi.org/10.1007/0-306-47950-8_13