Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

P.G.M. Baltus, A. Bezooijen, van

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

485 Downloads (Pure)

Abstract

This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described in this article. The RF transistors and biasing circuitry are implemented in silicon bipolar technology. A multi-layer LTCC substrate is used as carrier.
Original languageEnglish
Title of host publicationAnalog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers
EditorsJ.H. Huijsing, M. Steyaert, A.H.M. Roermund, van
Place of PublicationDordrecht
PublisherKluwer Academic Publishers
Pages249-268
Number of pages20
ISBN (Print)0-7923-7621-8, 978-0-7923-7621-7
DOIs
Publication statusPublished - 2002

Fingerprint

Global system for mobile communications
Power amplifiers
Transistors
Silicon
Substrates

Cite this

Baltus, P. G. M., & Bezooijen, van, A. (2002). Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module. In J. H. Huijsing, M. Steyaert, & A. H. M. Roermund, van (Eds.), Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers (pp. 249-268). Dordrecht: Kluwer Academic Publishers. https://doi.org/10.1007/0-306-47950-8_13
Baltus, P.G.M. ; Bezooijen, van, A. / Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module. Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers. editor / J.H. Huijsing ; M. Steyaert ; A.H.M. Roermund, van. Dordrecht : Kluwer Academic Publishers, 2002. pp. 249-268
@inbook{6fb989067be643a09bab4797d33a5cd1,
title = "Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module",
abstract = "This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described in this article. The RF transistors and biasing circuitry are implemented in silicon bipolar technology. A multi-layer LTCC substrate is used as carrier.",
author = "P.G.M. Baltus and {Bezooijen, van}, A.",
year = "2002",
doi = "10.1007/0-306-47950-8_13",
language = "English",
isbn = "0-7923-7621-8",
pages = "249--268",
editor = "J.H. Huijsing and M. Steyaert and {Roermund, van}, A.H.M.",
booktitle = "Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers",
publisher = "Kluwer Academic Publishers",
address = "Netherlands",

}

Baltus, PGM & Bezooijen, van, A 2002, Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module. in JH Huijsing, M Steyaert & AHM Roermund, van (eds), Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers. Kluwer Academic Publishers, Dordrecht, pp. 249-268. https://doi.org/10.1007/0-306-47950-8_13

Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module. / Baltus, P.G.M.; Bezooijen, van, A.

Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers. ed. / J.H. Huijsing; M. Steyaert; A.H.M. Roermund, van. Dordrecht : Kluwer Academic Publishers, 2002. p. 249-268.

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

TY - CHAP

T1 - Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

AU - Baltus, P.G.M.

AU - Bezooijen, van, A.

PY - 2002

Y1 - 2002

N2 - This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described in this article. The RF transistors and biasing circuitry are implemented in silicon bipolar technology. A multi-layer LTCC substrate is used as carrier.

AB - This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described in this article. The RF transistors and biasing circuitry are implemented in silicon bipolar technology. A multi-layer LTCC substrate is used as carrier.

U2 - 10.1007/0-306-47950-8_13

DO - 10.1007/0-306-47950-8_13

M3 - Chapter

SN - 0-7923-7621-8

SN - 978-0-7923-7621-7

SP - 249

EP - 268

BT - Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers

A2 - Huijsing, J.H.

A2 - Steyaert, M.

A2 - Roermund, van, A.H.M.

PB - Kluwer Academic Publishers

CY - Dordrecht

ER -

Baltus PGM, Bezooijen, van A. Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module. In Huijsing JH, Steyaert M, Roermund, van AHM, editors, Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers. Dordrecht: Kluwer Academic Publishers. 2002. p. 249-268 https://doi.org/10.1007/0-306-47950-8_13