Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

P.G.M. Baltus; A. Bezooijen, van

doi:10.1007/0-306-47950-8_13

Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

P.G.M. Baltus, A. Bezooijen, van

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic › peer-review

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Abstract

This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described in this article. The RF transistors and biasing circuitry are implemented in silicon bipolar technology. A multi-layer LTCC substrate is used as carrier.

Original language	English
Title of host publication	Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers
Editors	J.H. Huijsing, M. Steyaert, A.H.M. Roermund, van
Place of Publication	Dordrecht
Publisher	Kluwer Academic Publishers
Pages	249-268
Number of pages	20
ISBN (Print)	0-7923-7621-8, 978-0-7923-7621-7
DOIs	https://doi.org/10.1007/0-306-47950-8_13
Publication status	Published - 2002

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Baltus, P. G. M., & Bezooijen, van, A. (2002). Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module. In J. H. Huijsing, M. Steyaert, & A. H. M. Roermund, van (Eds.), Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers (pp. 249-268). Kluwer Academic Publishers. https://doi.org/10.1007/0-306-47950-8_13

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Baltus, PGM & Bezooijen, van, A 2002, Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module. in JH Huijsing, M Steyaert & AHM Roermund, van (eds), Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers. Kluwer Academic Publishers, Dordrecht, pp. 249-268. https://doi.org/10.1007/0-306-47950-8_13

Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module. / Baltus, P.G.M.; Bezooijen, van, A.
Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers. ed. / J.H. Huijsing; M. Steyaert; A.H.M. Roermund, van. Dordrecht: Kluwer Academic Publishers, 2002. p. 249-268.

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic › peer-review

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AB - This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described in this article. The RF transistors and biasing circuitry are implemented in silicon bipolar technology. A multi-layer LTCC substrate is used as carrier.

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Baltus PGM, Bezooijen, van A. Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module. In Huijsing JH, Steyaert M, Roermund, van AHM, editors, Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers. Dordrecht: Kluwer Academic Publishers. 2002. p. 249-268 doi: 10.1007/0-306-47950-8_13

Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

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