Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface: a sub-nanometer scale view

Davide F. Grossi (Corresponding author), Sebastian Koelling, Pavel A. Yunin, Paul M. Koenraad, Grigory V. Klimko, Sergey V. Sorokin, Mikhail N. Drozdov, Sergey V. Ivanov, Alexey A. Toropov, Andrei Y. Silov (Corresponding author)

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

Original languageEnglish
Article number1315
Number of pages11
JournalNanomaterials
Volume10
Issue number7
DOIs
Publication statusPublished - Jul 2020

Keywords

  • Diffusion
  • Diluted magnetic semiconductors
  • Dopants
  • Mn impurities
  • Segregation
  • ZnSe/GaAs interface

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