Abstract
The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.
Original language | English |
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Article number | 1315 |
Number of pages | 11 |
Journal | Nanomaterials |
Volume | 10 |
Issue number | 7 |
DOIs | |
Publication status | Published - Jul 2020 |
Keywords
- Diffusion
- Diluted magnetic semiconductors
- Dopants
- Mn impurities
- Segregation
- ZnSe/GaAs interface