Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface: a sub-nanometer scale view

Davide F. Grossi; Sebastian Koelling; Pavel A. Yunin; Paul M. Koenraad; Grigory V. Klimko; Sergey V. Sorokin; Mikhail N. Drozdov; Sergey V. Ivanov; Alexey A. Toropov; Andrei Y. Silov

doi:10.3390/nano10071315

Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface: a sub-nanometer scale view

Davide F. Grossi (Corresponding author), Sebastian Koelling, Pavel A. Yunin, Paul M. Koenraad, Grigory V. Klimko, Sergey V. Sorokin, Mikhail N. Drozdov, Sergey V. Ivanov, Alexey A. Toropov, Andrei Y. Silov (Corresponding author)

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

Original language	English
Article number	1315
Number of pages	11
Journal	Nanomaterials
Volume	10
Issue number	7
DOIs	https://doi.org/10.3390/nano10071315
Publication status	Published - Jul 2020

Keywords

Diffusion
Diluted magnetic semiconductors
Dopants
Mn impurities
Segregation
ZnSe/GaAs interface

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10.3390/nano10071315

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@article{0d9aae9c6ff04fa7b624dc91c8941feb,

title = "Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface: a sub-nanometer scale view",

abstract = "The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.",

keywords = "Diffusion, Diluted magnetic semiconductors, Dopants, Mn impurities, Segregation, ZnSe/GaAs interface",

author = "Grossi, {Davide F.} and Sebastian Koelling and Yunin, {Pavel A.} and Koenraad, {Paul M.} and Klimko, {Grigory V.} and Sorokin, {Sergey V.} and Drozdov, {Mikhail N.} and Ivanov, {Sergey V.} and Toropov, {Alexey A.} and Silov, {Andrei Y.}",

year = "2020",

month = jul,

doi = "10.3390/nano10071315",

language = "English",

volume = "10",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "7",

}

Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface : a sub-nanometer scale view. / Grossi, Davide F. (Corresponding author); Koelling, Sebastian; Yunin, Pavel A.; Koenraad, Paul M.; Klimko, Grigory V.; Sorokin, Sergey V.; Drozdov, Mikhail N.; Ivanov, Sergey V.; Toropov, Alexey A.; Silov, Andrei Y. (Corresponding author).

In: Nanomaterials, Vol. 10, No. 7, 1315, 07.2020.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface

T2 - a sub-nanometer scale view

AU - Grossi, Davide F.

AU - Koelling, Sebastian

AU - Yunin, Pavel A.

AU - Koenraad, Paul M.

AU - Klimko, Grigory V.

AU - Sorokin, Sergey V.

AU - Drozdov, Mikhail N.

AU - Ivanov, Sergey V.

AU - Toropov, Alexey A.

AU - Silov, Andrei Y.

PY - 2020/7

Y1 - 2020/7

N2 - The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

AB - The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

KW - Diffusion

KW - Diluted magnetic semiconductors

KW - Dopants

KW - Mn impurities

KW - Segregation

KW - ZnSe/GaAs interface

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