Deposition temperature dependence of material and Si surface passivaion properties of O3-based atomic layer deposited Al2O3-based films and stacks

S. Bordihn; V. Mertens; J.W. Müller; W.M.M. Kessels

doi:10.1116/1.4852855

Deposition temperature dependence of material and Si surface passivaion properties of O3-based atomic layer deposited Al2O3-based films and stacks

S. Bordihn
, V. Mertens
, J.W. Müller
, W.M.M. Kessels

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The material composition and the Si surface passivation of aluminum oxide (Al2O3) films prepared by atomic layer deposition using Al(CH3)3 and O3 as precursors were investigated for deposition temperatures (T Dep) between 200¿°C and 500¿°C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H]¿=¿3 at. % at 200¿°C to [H]¿

Original language	English
Pages (from-to)	01A128-1/7
Journal	Journal of Vacuum Science and Technology A
Volume	32
DOIs	https://doi.org/10.1116/1.4852855
Publication status	Published - 2014

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title = "Deposition temperature dependence of material and Si surface passivaion properties of O3-based atomic layer deposited Al2O3-based films and stacks",

abstract = "The material composition and the Si surface passivation of aluminum oxide (Al2O3) films prepared by atomic layer deposition using Al(CH3)3 and O3 as precursors were investigated for deposition temperatures (T Dep) between 200¿°C and 500¿°C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H]¿=¿3 at. \% at 200¿°C to [H]¿",

author = "S. Bordihn and V. Mertens and J.W. M{\"u}ller and W.M.M. Kessels",

year = "2014",

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language = "English",

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T1 - Deposition temperature dependence of material and Si surface passivaion properties of O3-based atomic layer deposited Al2O3-based films and stacks

AU - Bordihn, S.

AU - Mertens, V.

AU - Müller, J.W.

AU - Kessels, W.M.M.

PY - 2014

Y1 - 2014

N2 - The material composition and the Si surface passivation of aluminum oxide (Al2O3) films prepared by atomic layer deposition using Al(CH3)3 and O3 as precursors were investigated for deposition temperatures (T Dep) between 200¿°C and 500¿°C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H]¿=¿3 at. % at 200¿°C to [H]¿

AB - The material composition and the Si surface passivation of aluminum oxide (Al2O3) films prepared by atomic layer deposition using Al(CH3)3 and O3 as precursors were investigated for deposition temperatures (T Dep) between 200¿°C and 500¿°C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H]¿=¿3 at. % at 200¿°C to [H]¿

U2 - 10.1116/1.4852855

DO - 10.1116/1.4852855

M3 - Article

SN - 0734-2101

VL - 32

SP - 01A128-1/7

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

ER -

Deposition temperature dependence of material and Si surface passivaion properties of O3-based atomic layer deposited Al2O3-based films and stacks

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