Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.
Original languageEnglish
Title of host publicationProceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA
EditorsA. Londergan, O. Straten, van der, S.F. Bent, J.W. Elam, S. Gendt, de, S.B. Kang
Place of PublicationPennington, New Jersey, USA
PublisherElectrochemical Society
Pages45-54
ISBN (Print)978-1-566-77573-1
DOIs
Publication statusPublished - 2007
Event212th Electrochemical Society Meeting (ECS 2007) - Hilton Washington, Washington, United States
Duration: 8 Oct 20079 Oct 2007
Conference number: 212
https://www.electrochem.org/212

Publication series

NameECS Transactions
Volume11
ISSN (Print)1938-6737

Conference

Conference212th Electrochemical Society Meeting (ECS 2007)
Abbreviated titleECS 2007
CountryUnited States
CityWashington
Period8/10/079/10/07
Internet address

Fingerprint

lithium
copper
electrical resistivity

Cite this

Knoops, H. C. M., Baggetto, L., Langereis, E., Sanden, van de, M. C. M., Klootwijk, J. H., Roozeboom, F., ... Kessels, W. M. M. (2007). Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. In A. Londergan, O. Straten, van der, S. F. Bent, J. W. Elam, S. Gendt, de, & S. B. Kang (Eds.), Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA (pp. 45-54). (ECS Transactions; Vol. 11). Pennington, New Jersey, USA: Electrochemical Society. https://doi.org/10.1149/1.2779068
Knoops, H.C.M. ; Baggetto, L. ; Langereis, E. ; Sanden, van de, M.C.M. ; Klootwijk, J.H. ; Roozeboom, F. ; Niessen, R.A.H. ; Notten, P.H.L. ; Kessels, W.M.M. / Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA. editor / A. Londergan ; O. Straten, van der ; S.F. Bent ; J.W. Elam ; S. Gendt, de ; S.B. Kang. Pennington, New Jersey, USA : Electrochemical Society, 2007. pp. 45-54 (ECS Transactions).
@inproceedings{11db749d43b5461495d62cbf71b19be0,
title = "Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications",
abstract = "TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.",
author = "H.C.M. Knoops and L. Baggetto and E. Langereis and {Sanden, van de}, M.C.M. and J.H. Klootwijk and F. Roozeboom and R.A.H. Niessen and P.H.L. Notten and W.M.M. Kessels",
year = "2007",
doi = "10.1149/1.2779068",
language = "English",
isbn = "978-1-566-77573-1",
series = "ECS Transactions",
publisher = "Electrochemical Society",
pages = "45--54",
editor = "A. Londergan and {Straten, van der}, O. and S.F. Bent and J.W. Elam and {Gendt, de}, S. and S.B. Kang",
booktitle = "Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA",

}

Knoops, HCM, Baggetto, L, Langereis, E, Sanden, van de, MCM, Klootwijk, JH, Roozeboom, F, Niessen, RAH, Notten, PHL & Kessels, WMM 2007, Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. in A Londergan, O Straten, van der, SF Bent, JW Elam, S Gendt, de & SB Kang (eds), Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA. ECS Transactions, vol. 11, Electrochemical Society, Pennington, New Jersey, USA, pp. 45-54, 212th Electrochemical Society Meeting (ECS 2007), Washington, United States, 8/10/07. https://doi.org/10.1149/1.2779068

Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. / Knoops, H.C.M.; Baggetto, L.; Langereis, E.; Sanden, van de, M.C.M.; Klootwijk, J.H.; Roozeboom, F.; Niessen, R.A.H.; Notten, P.H.L.; Kessels, W.M.M.

Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA. ed. / A. Londergan; O. Straten, van der; S.F. Bent; J.W. Elam; S. Gendt, de; S.B. Kang. Pennington, New Jersey, USA : Electrochemical Society, 2007. p. 45-54 (ECS Transactions; Vol. 11).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

AU - Knoops, H.C.M.

AU - Baggetto, L.

AU - Langereis, E.

AU - Sanden, van de, M.C.M.

AU - Klootwijk, J.H.

AU - Roozeboom, F.

AU - Niessen, R.A.H.

AU - Notten, P.H.L.

AU - Kessels, W.M.M.

PY - 2007

Y1 - 2007

N2 - TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.

AB - TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.

U2 - 10.1149/1.2779068

DO - 10.1149/1.2779068

M3 - Conference contribution

SN - 978-1-566-77573-1

T3 - ECS Transactions

SP - 45

EP - 54

BT - Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA

A2 - Londergan, A.

A2 - Straten, van der, O.

A2 - Bent, S.F.

A2 - Elam, J.W.

A2 - Gendt, de, S.

A2 - Kang, S.B.

PB - Electrochemical Society

CY - Pennington, New Jersey, USA

ER -

Knoops HCM, Baggetto L, Langereis E, Sanden, van de MCM, Klootwijk JH, Roozeboom F et al. Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. In Londergan A, Straten, van der O, Bent SF, Elam JW, Gendt, de S, Kang SB, editors, Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA. Pennington, New Jersey, USA: Electrochemical Society. 2007. p. 45-54. (ECS Transactions). https://doi.org/10.1149/1.2779068