Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

H.C.M. Knoops; L. Baggetto; E. Langereis; M.C.M. Sanden, van de; J.H. Klootwijk; F. Roozeboom; R.A.H. Niessen; P.H.L. Notten; W.M.M. Kessels

doi:10.1149/1.2779068

Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

H.C.M. Knoops, L. Baggetto, E. Langereis, M.C.M. Sanden, van de, J.H. Klootwijk, F. Roozeboom, R.A.H. Niessen, P.H.L. Notten, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.

Original language	English
Title of host publication	Proceedings of the 3rd symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA
Editors	A. Londergan, O. Straten, van der, S.F. Bent, J.W. Elam, S. Gendt, de, S.B. Kang
Place of Publication	Pennington, New Jersey, USA
Publisher	Electrochemical Society, Inc.
Pages	45-54
ISBN (Print)	978-1-566-77573-1
DOIs	https://doi.org/10.1149/1.2779068
Publication status	Published - 2007
Event	212th Electrochemical Society Meeting (ECS 2007) - Hilton Washington, Washington, United States Duration: 8 Oct 2007 → 9 Oct 2007 Conference number: 212 https://www.electrochem.org/212

Publication series

Name	ECS Transactions
Volume	11
ISSN (Print)	1938-6737

Conference

Conference	212th Electrochemical Society Meeting (ECS 2007)
Abbreviated title	ECS 2007
Country/Territory	United States
City	Washington
Period	8/10/07 → 9/10/07
Internet address	https://www.electrochem.org/212

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Knoops, H. C. M., Baggetto, L., Langereis, E., Sanden, van de, M. C. M., Klootwijk, J. H., Roozeboom, F., Niessen, R. A. H., Notten, P. H. L., & Kessels, W. M. M. (2007). Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. In A. Londergan, O. Straten, van der, S. F. Bent, J. W. Elam, S. Gendt, de, & S. B. Kang (Eds.), Proceedings of the 3rd symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA (pp. 45-54). (ECS Transactions; Vol. 11). Electrochemical Society, Inc.. https://doi.org/10.1149/1.2779068

Knoops, H.C.M. ; Baggetto, L. ; Langereis, E. et al. / Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. Proceedings of the 3rd symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA. editor / A. Londergan ; O. Straten, van der ; S.F. Bent ; J.W. Elam ; S. Gendt, de ; S.B. Kang. Pennington, New Jersey, USA : Electrochemical Society, Inc., 2007. pp. 45-54 (ECS Transactions).

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title = "Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications",

abstract = "TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.",

author = "H.C.M. Knoops and L. Baggetto and E. Langereis and {Sanden, van de}, M.C.M. and J.H. Klootwijk and F. Roozeboom and R.A.H. Niessen and P.H.L. Notten and W.M.M. Kessels",

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doi = "10.1149/1.2779068",

language = "English",

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publisher = "Electrochemical Society, Inc.",

pages = "45--54",

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booktitle = "Proceedings of the 3rd symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA",

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note = "212th Electrochemical Society Meeting (ECS 2007), ECS 2007 ; Conference date: 08-10-2007 Through 09-10-2007",

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Knoops, HCM, Baggetto, L, Langereis, E , Sanden, van de, MCM, Klootwijk, JH, Roozeboom, F, Niessen, RAH, Notten, PHL & Kessels, WMM 2007, Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. in A Londergan, O Straten, van der, SF Bent, JW Elam, S Gendt, de & SB Kang (eds), Proceedings of the 3rd symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA. ECS Transactions, vol. 11, Electrochemical Society, Inc., Pennington, New Jersey, USA, pp. 45-54, 212th Electrochemical Society Meeting (ECS 2007), Washington, District of Columbia, United States, 8/10/07. https://doi.org/10.1149/1.2779068

Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. / Knoops, H.C.M.; Baggetto, L.; Langereis, E. et al.
Proceedings of the 3rd symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA. ed. / A. Londergan; O. Straten, van der; S.F. Bent; J.W. Elam; S. Gendt, de; S.B. Kang. Pennington, New Jersey, USA: Electrochemical Society, Inc., 2007. p. 45-54 (ECS Transactions; Vol. 11).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

AU - Knoops, H.C.M.

AU - Baggetto, L.

AU - Langereis, E.

AU - Sanden, van de, M.C.M.

AU - Klootwijk, J.H.

AU - Roozeboom, F.

AU - Niessen, R.A.H.

AU - Notten, P.H.L.

AU - Kessels, W.M.M.

N1 - Conference code: 212

PY - 2007

Y1 - 2007

N2 - TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.

AB - TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.

U2 - 10.1149/1.2779068

DO - 10.1149/1.2779068

M3 - Conference contribution

SN - 978-1-566-77573-1

T3 - ECS Transactions

SP - 45

EP - 54

BT - Proceedings of the 3rd symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA

A2 - Londergan, A.

A2 - Straten, van der, O.

A2 - Bent, S.F.

A2 - Elam, J.W.

A2 - Gendt, de, S.

A2 - Kang, S.B.

PB - Electrochemical Society, Inc.

CY - Pennington, New Jersey, USA

T2 - 212th Electrochemical Society Meeting (ECS 2007)

Y2 - 8 October 2007 through 9 October 2007

ER -

Knoops HCM, Baggetto L, Langereis E , Sanden, van de MCM, Klootwijk JH, Roozeboom F et al. Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. In Londergan A, Straten, van der O, Bent SF, Elam JW, Gendt, de S, Kang SB, editors, Proceedings of the 3rd symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA. Pennington, New Jersey, USA: Electrochemical Society, Inc. 2007. p. 45-54. (ECS Transactions). doi: 10.1149/1.2779068

Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

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