Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

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Abstract

TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.
Original languageEnglish
Title of host publicationProceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA
EditorsA. Londergan, O. Straten, van der, S.F. Bent, J.W. Elam, S. Gendt, de, S.B. Kang
Place of PublicationPennington, New Jersey, USA
PublisherElectrochemical Society, Inc.
Pages45-54
ISBN (Print)978-1-566-77573-1
DOIs
Publication statusPublished - 2007
Event212th Electrochemical Society Meeting (ECS 2007) - Hilton Washington, Washington, United States
Duration: 8 Oct 20079 Oct 2007
Conference number: 212
https://www.electrochem.org/212

Publication series

NameECS Transactions
Volume11
ISSN (Print)1938-6737

Conference

Conference212th Electrochemical Society Meeting (ECS 2007)
Abbreviated titleECS 2007
CountryUnited States
CityWashington
Period8/10/079/10/07
Internet address

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