Deposition of TiN and TaN by remote plasma ALD for Cu and Li diffusion barrier applications

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Abstract

TaN and TiN films were deposited by remote plasma atomic layer deposition (ALD) using the combinations of Ta[N(CH3)2]5 precursor with H2 plasma and TiCl4 precursor with H2–N2 plasma, respectively. Both the TaN and TiN films had a cubic phase composition with a relatively low resistivity (TaN: 380 µ cm; TiN: 150 µ cm). Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma exposure time. Preliminary tests on planar substrates were carried out revealing the potential of the TaN and TiN films as Cu and Li diffusion barriers in through-silicon via and silicon-integrated thin-film battery applications, respectively. For the specific films studied, it was found that TiN showed better barrier properties than TaN for both application areas. The TiN films were an effective barrier to Cu diffusion and had no Cu diffusion for anneal temperatures up to 700°C. The TiN films showed low Li intercalation during electrochemical charging and discharging.
Original languageEnglish
Pages (from-to)G287-G294
Number of pages8
JournalJournal of the Electrochemical Society
Volume155
Issue number12
DOIs
Publication statusPublished - 2008

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Plasma deposition
Diffusion barriers
Atomic layer deposition
Silicon
Plasmas
Intercalation
Phase composition
Materials properties
Thin films
Substrates

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title = "Deposition of TiN and TaN by remote plasma ALD for Cu and Li diffusion barrier applications",
abstract = "TaN and TiN films were deposited by remote plasma atomic layer deposition (ALD) using the combinations of Ta[N(CH3)2]5 precursor with H2 plasma and TiCl4 precursor with H2–N2 plasma, respectively. Both the TaN and TiN films had a cubic phase composition with a relatively low resistivity (TaN: 380 µ cm; TiN: 150 µ cm). Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma exposure time. Preliminary tests on planar substrates were carried out revealing the potential of the TaN and TiN films as Cu and Li diffusion barriers in through-silicon via and silicon-integrated thin-film battery applications, respectively. For the specific films studied, it was found that TiN showed better barrier properties than TaN for both application areas. The TiN films were an effective barrier to Cu diffusion and had no Cu diffusion for anneal temperatures up to 700°C. The TiN films showed low Li intercalation during electrochemical charging and discharging.",
author = "H.C.M. Knoops and L. Baggetto and E. Langereis and {Sanden, van de}, M.C.M. and J.H. Klootwijk and F. Roozeboom and R.A.H. Niessen and P.H.L. Notten and W.M.M. Kessels",
year = "2008",
doi = "10.1149/1.2988651",
language = "English",
volume = "155",
pages = "G287--G294",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
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Deposition of TiN and TaN by remote plasma ALD for Cu and Li diffusion barrier applications. / Knoops, H.C.M.; Baggetto, L.; Langereis, E.; Sanden, van de, M.C.M.; Klootwijk, J.H.; Roozeboom, F.; Niessen, R.A.H.; Notten, P.H.L.; Kessels, W.M.M.

In: Journal of the Electrochemical Society, Vol. 155, No. 12, 2008, p. G287-G294.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Deposition of TiN and TaN by remote plasma ALD for Cu and Li diffusion barrier applications

AU - Knoops, H.C.M.

AU - Baggetto, L.

AU - Langereis, E.

AU - Sanden, van de, M.C.M.

AU - Klootwijk, J.H.

AU - Roozeboom, F.

AU - Niessen, R.A.H.

AU - Notten, P.H.L.

AU - Kessels, W.M.M.

PY - 2008

Y1 - 2008

N2 - TaN and TiN films were deposited by remote plasma atomic layer deposition (ALD) using the combinations of Ta[N(CH3)2]5 precursor with H2 plasma and TiCl4 precursor with H2–N2 plasma, respectively. Both the TaN and TiN films had a cubic phase composition with a relatively low resistivity (TaN: 380 µ cm; TiN: 150 µ cm). Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma exposure time. Preliminary tests on planar substrates were carried out revealing the potential of the TaN and TiN films as Cu and Li diffusion barriers in through-silicon via and silicon-integrated thin-film battery applications, respectively. For the specific films studied, it was found that TiN showed better barrier properties than TaN for both application areas. The TiN films were an effective barrier to Cu diffusion and had no Cu diffusion for anneal temperatures up to 700°C. The TiN films showed low Li intercalation during electrochemical charging and discharging.

AB - TaN and TiN films were deposited by remote plasma atomic layer deposition (ALD) using the combinations of Ta[N(CH3)2]5 precursor with H2 plasma and TiCl4 precursor with H2–N2 plasma, respectively. Both the TaN and TiN films had a cubic phase composition with a relatively low resistivity (TaN: 380 µ cm; TiN: 150 µ cm). Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma exposure time. Preliminary tests on planar substrates were carried out revealing the potential of the TaN and TiN films as Cu and Li diffusion barriers in through-silicon via and silicon-integrated thin-film battery applications, respectively. For the specific films studied, it was found that TiN showed better barrier properties than TaN for both application areas. The TiN films were an effective barrier to Cu diffusion and had no Cu diffusion for anneal temperatures up to 700°C. The TiN films showed low Li intercalation during electrochemical charging and discharging.

U2 - 10.1149/1.2988651

DO - 10.1149/1.2988651

M3 - Article

VL - 155

SP - G287-G294

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

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