Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor

S.B.S. Heil, J.L. Hemmen, van, C.J. Hodson, N. Singh, J.H. Klootwijk, F. Roozeboom, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

The authors describe a remote plasma at. layer deposition reactor (Oxford Instruments FlexAL) that includes an inductively coupled plasma source and a load lock capable of handling substrates up to 200 mm in diam. The deposition of titanium nitride (TiN) and hafnium oxide (HfO2) is described for the combination of the metal-halide precursor TiCl4 and H2-N2 plasma and the combination of the metallorg. precursor Hf[N(CH3)(C2H5)]4 and O2 plasma, resp. The influence of the plasma exposure time and substrate temp. has been studied and compositional, structural, and elec. properties are reported. TiN films with a low Cl impurity content were obtained at 350 DegC at a growth rate of 0.35 A/cycle with an elec. resistivity as low as 150 micro W cm. Carbon-free (detection limit
Original languageEnglish
Pages (from-to)1357-1366
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Volume25
Issue number5
DOIs
Publication statusPublished - 2007

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