Deposition of amorphous silicon by the "chemical annealing" technique in a conventional rf reactor

W.G.J.H.M. Sark, van; P.G. Vliet, van de; J. Bezemer; M. Kars; W.F. Weg, van der

Deposition of amorphous silicon by the "chemical annealing" technique in a conventional rf reactor

W.G.J.H.M. Sark, van
, P.G. Vliet, van de
, J. Bezemer
, M. Kars
, W.F. Weg, van der

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Original language	English
Title of host publication	Proceedings 9th international colloquium on plasma processes, June 6-11, 1993, Antibes, Juan-les-Pins, France
Place of Publication	Paris
Publisher	Société Française du Vide
Pages	72-74
Publication status	Published - 1993
Externally published	Yes

Publication series

Name	Le vide, les couches minces
Volume	suppl. 266

Cite this

Sark, van, W. G. J. H. M., Vliet, van de, P. G., Bezemer, J., Kars, M., & Weg, van der, W. F. (1993). Deposition of amorphous silicon by the "chemical annealing" technique in a conventional rf reactor. In Proceedings 9th international colloquium on plasma processes, June 6-11, 1993, Antibes, Juan-les-Pins, France (pp. 72-74). (Le vide, les couches minces; Vol. suppl. 266). Société Française du Vide.

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title = "Deposition of amorphous silicon by the {"}chemical annealing{"} technique in a conventional rf reactor",

author = "\{Sark, van\}, W.G.J.H.M. and \{Vliet, van de\}, P.G. and J. Bezemer and M. Kars and \{Weg, van der\}, W.F.",

year = "1993",

language = "English",

series = "Le vide, les couches minces",

publisher = "Soci{\'e}t{\'e} Fran{\c c}aise du Vide",

pages = "72--74",

booktitle = "Proceedings 9th international colloquium on plasma processes, June 6-11, 1993, Antibes, Juan-les-Pins, France",

address = "France",

}

Sark, van, WGJHM, Vliet, van de, PG, Bezemer, J, Kars, M & Weg, van der, WF 1993, Deposition of amorphous silicon by the "chemical annealing" technique in a conventional rf reactor. in Proceedings 9th international colloquium on plasma processes, June 6-11, 1993, Antibes, Juan-les-Pins, France. Le vide, les couches minces, vol. suppl. 266, Société Française du Vide, Paris, pp. 72-74.

Deposition of amorphous silicon by the "chemical annealing" technique in a conventional rf reactor. / Sark, van, W.G.J.H.M.; Vliet, van de, P.G.; Bezemer, J. et al.
Proceedings 9th international colloquium on plasma processes, June 6-11, 1993, Antibes, Juan-les-Pins, France. Paris: Société Française du Vide, 1993. p. 72-74 (Le vide, les couches minces; Vol. suppl. 266).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Deposition of amorphous silicon by the "chemical annealing" technique in a conventional rf reactor

AU - Sark, van, W.G.J.H.M.

AU - Vliet, van de, P.G.

AU - Bezemer, J.

AU - Kars, M.

AU - Weg, van der, W.F.

PY - 1993

Y1 - 1993

M3 - Conference contribution

T3 - Le vide, les couches minces

SP - 72

EP - 74

BT - Proceedings 9th international colloquium on plasma processes, June 6-11, 1993, Antibes, Juan-les-Pins, France

PB - Société Française du Vide

CY - Paris

ER -