Deposition of a-Si:H using a supersonically expanding argon plasma

G.J. Meeusen, Z. Qing, A.T.M. Wilbers, D.C. Schram

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Amorphous Hydrogenated Silicon (a-Si:H) is a material that is widely used in the field of solar cells and other optoelectronics. The only method available to produce high quality a-Si:H is by means of plasma enhanced chemical vapor deposition (PECVD). Radicals responsible for deposition diffuse from a glow discharge toward a substrate that is heated up to 600 K where a layer grows with a speed of typically 0.1 nm/s. The deposition rate is limited because of transport is diffusion determined. An increase of this deposition rate and material efficiency can be expected if the radicals are transported toward the substrate using another transport mechanism.

Original languageEnglish
Title of host publicationThin film physics and applications (TFPA) : international conference, Shanghai, China, 15-17 April 1991
EditorsShixun Zhou, Yongling Wang
Place of PublicationBellingham
PublisherSPIE
Pages252-257
Number of pages6
Volume1
ISBN (Print)0819406465
DOIs
Publication statusPublished - 1 Dec 1991
EventInternational Conference on Thin Film Physics and Applications - '91 TFPA - Shanghai, China
Duration: 15 Apr 199117 Apr 1991

Publication series

NameProceedings of SPIE
Volume1519
ISSN (Print)0277-786X

Conference

ConferenceInternational Conference on Thin Film Physics and Applications - '91 TFPA
CityShanghai, China
Period15/04/9117/04/91

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