Deposition of a-Si:H and a-C:H using an expanding thermal arc plasma

M.C.M. Sanden, van de, R.J. Severens, J.W.A.M. Gielen, R.M.J. Paffen, D.C. Schram

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This paper deals with the deposition of a-C:H and a-Si:H using the expanding thermal arc technique. The method is compared with other deposition techniques. The basics of the technique are explained and recent results on the deposition of high-quality a-C:H and a-Si:H are discussed. It is shown that high rates, for a-Si:H and for a-C:H, are possible without loss of quality.
Original languageEnglish
Pages (from-to)268-274
JournalPlasma Sources Science and Technology
Issue number2
Publication statusPublished - 1996


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