Deposition of a-Si:H and a-C:H using an expanding thermal arc plasma

M.C.M. Sanden, van de, R.J. Severens, J.W.A.M. Gielen, R.M.J. Paffen, D.C. Schram

Research output: Contribution to journalArticleAcademicpeer-review

31 Citations (Scopus)
192 Downloads (Pure)

Abstract

This paper deals with the deposition of a-C:H and a-Si:H using the expanding thermal arc technique. The method is compared with other deposition techniques. The basics of the technique are explained and recent results on the deposition of high-quality a-C:H and a-Si:H are discussed. It is shown that high rates, for a-Si:H and for a-C:H, are possible without loss of quality.
Original languageEnglish
Pages (from-to)268-274
JournalPlasma Sources Science and Technology
Volume5
Issue number2
DOIs
Publication statusPublished - 1996

Fingerprint

Dive into the research topics of 'Deposition of a-Si:H and a-C:H using an expanding thermal arc plasma'. Together they form a unique fingerprint.

Cite this