Depletion-type thin-film transistors with a ferroelectric insulator

M.W.J. Prins, S.E. Zinnemers, J.F.M. Cillessen, J.B. Giesbers

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Abstract

We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7×103. Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors.
Original languageEnglish
Pages (from-to)458-460
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number4
DOIs
Publication statusPublished - 1997

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