Depletion-type thin-film transistors with a ferroelectric insulator

M.W.J. Prins; S.E. Zinnemers; J.F.M. Cillessen; J.B. Giesbers

doi:10.1063/1.118180

Depletion-type thin-film transistors with a ferroelectric insulator

M.W.J. Prins, S.E. Zinnemers, J.F.M. Cillessen, J.B. Giesbers

Molecular Biosensing

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Abstract

We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7×103. Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors.

Original language	English
Pages (from-to)	458-460
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	4
DOIs	https://doi.org/10.1063/1.118180
Publication status	Published - 1997

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title = "Depletion-type thin-film transistors with a ferroelectric insulator",

abstract = "We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7×103. Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors.",

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AU - Prins, M.W.J.

AU - Zinnemers, S.E.

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AU - Giesbers, J.B.

PY - 1997

Y1 - 1997

N2 - We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7×103. Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors.

AB - We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7×103. Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors.

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DO - 10.1063/1.118180

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Depletion-type thin-film transistors with a ferroelectric insulator

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