Depletion field focusing in semiconductors

M.W.J. Prins; A.P. Gelder, Van

doi:10.1016/0921-4526(95)00619-2

Depletion field focusing in semiconductors

M.W.J. Prins
, A.P. Gelder, Van

Molecular Biosensing

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

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Abstract

We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or defocusing of carriers in the depletion region.

Original language	English
Pages (from-to)	297-299
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	218
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(95)00619-2
Publication status	Published - 1996

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title = "Depletion field focusing in semiconductors",

abstract = "We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or defocusing of carriers in the depletion region.",

author = "M.W.J. Prins and \{Gelder, Van\}, A.P.",

year = "1996",

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AU - Prins, M.W.J.

AU - Gelder, Van, A.P.

PY - 1996

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N2 - We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or defocusing of carriers in the depletion region.

AB - We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or defocusing of carriers in the depletion region.

U2 - 10.1016/0921-4526(95)00619-2

DO - 10.1016/0921-4526(95)00619-2

M3 - Article

SN - 0921-4526

VL - 218

SP - 297

EP - 299

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Depletion field focusing in semiconductors

Abstract

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