Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um

M. Muneeb; X Chen; P.A. Verheyen; G. Lepage; S. Pathak; E.M.P. Ryckeboer; A. Malik; M.A.J. Kuyken; J. Nedeljkovic; L.D.E. Campenhout, van; G. Mashanovich; G.C. Roelkens

doi:10.1364/OE.21.011659

Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um

M. Muneeb, X Chen, P.A. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, M.A.J. Kuyken, J. Nedeljkovic, L.D.E. Campenhout, van, G. Mashanovich, G.C. Roelkens

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Abstract

The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

Original language	English
Pages (from-to)	11659-11669
Journal	Optics Express
Volume	21
Issue number	10
DOIs	https://doi.org/10.1364/OE.21.011659
Publication status	Published - 2013

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title = "Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um",

abstract = "The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.",

author = "M. Muneeb and X Chen and P.A. Verheyen and G. Lepage and S. Pathak and E.M.P. Ryckeboer and A. Malik and M.A.J. Kuyken and J. Nedeljkovic and \{Campenhout, van\}, L.D.E. and G. Mashanovich and G.C. Roelkens",

year = "2013",

doi = "10.1364/OE.21.011659",

language = "English",

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pages = "11659--11669",

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T1 - Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um

AU - Muneeb, M.

AU - Chen, X

AU - Verheyen, P.A.

AU - Lepage, G.

AU - Pathak, S.

AU - Ryckeboer, E.M.P.

AU - Malik, A.

AU - Kuyken, M.A.J.

AU - Nedeljkovic, J.

AU - Campenhout, van, L.D.E.

AU - Mashanovich, G.

AU - Roelkens, G.C.

PY - 2013

Y1 - 2013

N2 - The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

AB - The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

U2 - 10.1364/OE.21.011659

DO - 10.1364/OE.21.011659

M3 - Article

C2 - 23736389

SN - 1094-4087

VL - 21

SP - 11659

EP - 11669

JO - Optics Express

JF - Optics Express

IS - 10

ER -

Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um

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