Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um

M. Muneeb; X Chen; P.A. Verheyen; G. Lepage; S. Pathak; E.M.P. Ryckeboer; A. Malik; M.A.J. Kuyken; J. Nedeljkovic; L.D.E. Campenhout, van; G. Mashanovich; G.C. Roelkens

doi:10.1364/OE.21.011659

Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um

M. Muneeb, X Chen, P.A. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, M.A.J. Kuyken, J. Nedeljkovic, L.D.E. Campenhout, van, G. Mashanovich, G.C. Roelkens

Research output: Contribution to journal › Article › Academic › peer-review

106 Citations (Scopus)

107 Downloads (Pure)

Abstract

The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

Original language	English
Pages (from-to)	11659-11669
Journal	Optics Express
Volume	21
Issue number	10
DOIs	https://doi.org/10.1364/OE.21.011659
Publication status	Published - 2013

Access to Document

10.1364/OE.21.011659

publishers versionFinal published version, 2.13 MB

Fingerprint Dive into the research topics of 'Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um'. Together they form a unique fingerprint.

Cite this

Muneeb, M., Chen, X., Verheyen, P. A., Lepage, G., Pathak, S., Ryckeboer, E. M. P., Malik, A., Kuyken, M. A. J., Nedeljkovic, J., Campenhout, van, L. D. E., Mashanovich, G., & Roelkens, G. C. (2013). Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um. Optics Express, 21(10), 11659-11669. https://doi.org/10.1364/OE.21.011659

@article{ea3774bde75e48a2ac14fa22e6fcc426,

title = "Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um",

abstract = "The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.",

author = "M. Muneeb and X Chen and P.A. Verheyen and G. Lepage and S. Pathak and E.M.P. Ryckeboer and A. Malik and M.A.J. Kuyken and J. Nedeljkovic and {Campenhout, van}, L.D.E. and G. Mashanovich and G.C. Roelkens",

year = "2013",

doi = "10.1364/OE.21.011659",

language = "English",

volume = "21",

pages = "11659--11669",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optical Society of America (OSA)",

number = "10",

}

Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um. / Muneeb, M.; Chen, X; Verheyen, P.A.; Lepage, G.; Pathak, S.; Ryckeboer, E.M.P.; Malik, A.; Kuyken, M.A.J.; Nedeljkovic, J.; Campenhout, van, L.D.E.; Mashanovich, G.; Roelkens, G.C.

In: Optics Express, Vol. 21, No. 10, 2013, p. 11659-11669.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um

AU - Muneeb, M.

AU - Chen, X

AU - Verheyen, P.A.

AU - Lepage, G.

AU - Pathak, S.

AU - Ryckeboer, E.M.P.

AU - Malik, A.

AU - Kuyken, M.A.J.

AU - Nedeljkovic, J.

AU - Campenhout, van, L.D.E.

AU - Mashanovich, G.

AU - Roelkens, G.C.

PY - 2013

Y1 - 2013

N2 - The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

AB - The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

U2 - 10.1364/OE.21.011659

DO - 10.1364/OE.21.011659

M3 - Article

C2 - 23736389

VL - 21

SP - 11659

EP - 11669

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 10

ER -