Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um

M. Muneeb, X Chen, P.A. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, M.A.J. Kuyken, J. Nedeljkovic, L.D.E. Campenhout, van, G. Mashanovich, G.C. Roelkens

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Abstract

The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.
Original languageEnglish
Pages (from-to)11659-11669
JournalOptics Express
Volume21
Issue number10
DOIs
Publication statusPublished - 2013

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    Muneeb, M., Chen, X., Verheyen, P. A., Lepage, G., Pathak, S., Ryckeboer, E. M. P., Malik, A., Kuyken, M. A. J., Nedeljkovic, J., Campenhout, van, L. D. E., Mashanovich, G., & Roelkens, G. C. (2013). Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um. Optics Express, 21(10), 11659-11669. https://doi.org/10.1364/OE.21.011659