Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um

M. Muneeb, X Chen, P.A. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, M.A.J. Kuyken, J. Nedeljkovic, L.D.E. Campenhout, van, G. Mashanovich, G.C. Roelkens

Research output: Contribution to journalArticlepeer-review

107 Citations (Scopus)
126 Downloads (Pure)

Abstract

The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.
Original languageEnglish
Pages (from-to)11659-11669
JournalOptics Express
Volume21
Issue number10
DOIs
Publication statusPublished - 2013

Fingerprint

Dive into the research topics of 'Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um'. Together they form a unique fingerprint.

Cite this