Demonstrating the potential of accurate absolute cross-grain stress and orientation correlation using electron backscatter diffraction

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

We report a first exploration of High-angular-Resolution Electron Backscatter Diffraction, without using simulated Electron Backscatter Diffraction patterns as a reference, for absolute stress and orientation measurements in polycrystalline materials. By co-correlating the pattern center and fully exploiting crystal symmetry and plane-stress, simultaneous correlation of all overlapping regions of interest in multiple direct-electron-detector, energy-filtered Electron Backscatter Diffraction patterns is achieved. The potential for highly accurate measurement of absolute stress, crystal orientation and pattern center is demonstrated on a virtual polycrystalline case-study, showing errors respectively below 20 MPa (or 10−4 in strain), 7 × 10−5 rad and 0.06 pixels.

LanguageEnglish
Pages266-271
Number of pages6
JournalScripta Materialia
Volume162
DOIs
StatePublished - 15 Mar 2019

Fingerprint

Electron diffraction
diffraction patterns
electron counters
Crystal orientation
Diffraction patterns
plane stress
stress measurement
angular resolution
diffraction
crystals
Polycrystalline materials
electrons
pixels
Crystal symmetry
electron energy
high resolution
symmetry
Pixels
Detectors
Electrons

Keywords

  • Absolute stress
  • Crystal symmetry
  • EBSD
  • Grain boundaries
  • HR-EBSD
  • Pattern center

Cite this

@article{cbe268abd9344326a393d24f8ffb7859,
title = "Demonstrating the potential of accurate absolute cross-grain stress and orientation correlation using electron backscatter diffraction",
abstract = "We report a first exploration of High-angular-Resolution Electron Backscatter Diffraction, without using simulated Electron Backscatter Diffraction patterns as a reference, for absolute stress and orientation measurements in polycrystalline materials. By co-correlating the pattern center and fully exploiting crystal symmetry and plane-stress, simultaneous correlation of all overlapping regions of interest in multiple direct-electron-detector, energy-filtered Electron Backscatter Diffraction patterns is achieved. The potential for highly accurate measurement of absolute stress, crystal orientation and pattern center is demonstrated on a virtual polycrystalline case-study, showing errors respectively below 20 MPa (or 10−4 in strain), 7 × 10−5 rad and 0.06 pixels.",
keywords = "Absolute stress, Crystal symmetry, EBSD, Grain boundaries, HR-EBSD, Pattern center",
author = "Tijmen Vermeij and {de Graef}, Marc and Johan Hoefnagels",
year = "2019",
month = "3",
day = "15",
doi = "10.1016/j.scriptamat.2018.11.030",
language = "English",
volume = "162",
pages = "266--271",
journal = "Scripta Materialia",
issn = "1359-6462",
publisher = "Elsevier",

}

Demonstrating the potential of accurate absolute cross-grain stress and orientation correlation using electron backscatter diffraction. / Vermeij, Tijmen; de Graef, Marc; Hoefnagels, Johan.

In: Scripta Materialia, Vol. 162, 15.03.2019, p. 266-271.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Demonstrating the potential of accurate absolute cross-grain stress and orientation correlation using electron backscatter diffraction

AU - Vermeij,Tijmen

AU - de Graef,Marc

AU - Hoefnagels,Johan

PY - 2019/3/15

Y1 - 2019/3/15

N2 - We report a first exploration of High-angular-Resolution Electron Backscatter Diffraction, without using simulated Electron Backscatter Diffraction patterns as a reference, for absolute stress and orientation measurements in polycrystalline materials. By co-correlating the pattern center and fully exploiting crystal symmetry and plane-stress, simultaneous correlation of all overlapping regions of interest in multiple direct-electron-detector, energy-filtered Electron Backscatter Diffraction patterns is achieved. The potential for highly accurate measurement of absolute stress, crystal orientation and pattern center is demonstrated on a virtual polycrystalline case-study, showing errors respectively below 20 MPa (or 10−4 in strain), 7 × 10−5 rad and 0.06 pixels.

AB - We report a first exploration of High-angular-Resolution Electron Backscatter Diffraction, without using simulated Electron Backscatter Diffraction patterns as a reference, for absolute stress and orientation measurements in polycrystalline materials. By co-correlating the pattern center and fully exploiting crystal symmetry and plane-stress, simultaneous correlation of all overlapping regions of interest in multiple direct-electron-detector, energy-filtered Electron Backscatter Diffraction patterns is achieved. The potential for highly accurate measurement of absolute stress, crystal orientation and pattern center is demonstrated on a virtual polycrystalline case-study, showing errors respectively below 20 MPa (or 10−4 in strain), 7 × 10−5 rad and 0.06 pixels.

KW - Absolute stress

KW - Crystal symmetry

KW - EBSD

KW - Grain boundaries

KW - HR-EBSD

KW - Pattern center

UR - http://www.scopus.com/inward/record.url?scp=85056809830&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2018.11.030

DO - 10.1016/j.scriptamat.2018.11.030

M3 - Article

VL - 162

SP - 266

EP - 271

JO - Scripta Materialia

T2 - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

ER -