Delta n=0.22 birefringence measurement by surface emitting second harmonic generation in selectively oxidized GaAs/AlAs optical waveguides

A. Fiore, V. Berger, E. Rosencher, S. Crouzy, N. Laurent, J. Nagle

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Abstract

The authors have measured the birefringence enhancement due to lateral selective oxidn. of AlAs in GaAs/AlAs optical waveguides. The birefringence was measured by imaging the surface-emitted 2nd harmonic generated by the nonlinear interaction of counterpropagating TE and TM modes. In a waveguide contg. a single AlAs layer the birefringence is enhanced from Delta n = 0.017 (before oxidn.) to Delta n = 0.038 (after oxidn.). In an oxidized multilayer GaAs/AlAs waveguide, a birefringence as high as Delta n = 0.22 is measured. This birefringence is sufficient to phase-match the difference frequency generation of 3-5 micro m IR radiation from 2 near-IR pumps. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)2587-2589
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number18
DOIs
Publication statusPublished - 1997

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