Degradation of Si MOSFET gate oxides by ion implantation

Y. V. Ponomarev, P. A. Stolk, C. J.J. Dachs, P. H. Woerlee

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


We have characterised the effects of ion implantation in advanced MOSFETs, and have shown that severe gate oxide degradations can be induced by ion implantations used routinely in front-end processing of MOS transistors. The mechanisms of oxide degradation are revealed to be connected to the nuclear energy transfer to the O atoms in the oxide during implantation. Si and O ion mixing can result in significant increase of the effective oxide thickness which also result in intrinsic device performance degradation.

Original languageEnglish
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
EditorsH. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
Place of PublicationPiscataway
PublisherIEEE Computer Society
Number of pages4
ISBN (Print)9782863322482, 2863322486
Publication statusPublished - 1 Jan 2000
Externally publishedYes
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: 11 Sep 200013 Sep 2000


Conference30th European Solid-State Device Research Conference, ESSDERC 2000

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