Degradation of Si MOSFET gate oxides by ion implantation

Y. V. Ponomarev, P. A. Stolk, C. J.J. Dachs, P. H. Woerlee

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We have characterised the effects of ion implantation in advanced MOSFETs, and have shown that severe gate oxide degradations can be induced by ion implantations used routinely in front-end processing of MOS transistors. The mechanisms of oxide degradation are revealed to be connected to the nuclear energy transfer to the O atoms in the oxide during implantation. Si and O ion mixing can result in significant increase of the effective oxide thickness which also result in intrinsic device performance degradation.

Original languageEnglish
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
EditorsH. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
Place of PublicationPiscataway
PublisherIEEE Computer Society
Pages128-131
Number of pages4
ISBN (Print)9782863322482, 2863322486
DOIs
Publication statusPublished - 1 Jan 2000
Externally publishedYes
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: 11 Sep 200013 Sep 2000

Conference

Conference30th European Solid-State Device Research Conference, ESSDERC 2000
CountryIreland
CityCork
Period11/09/0013/09/00

Fingerprint Dive into the research topics of 'Degradation of Si MOSFET gate oxides by ion implantation'. Together they form a unique fingerprint.

Cite this