Degradation of Si MOSFET gate oxides by ion implantation

Y. V. Ponomarev; P. A. Stolk; C. J.J. Dachs; P. H. Woerlee

doi:10.1109/ESSDERC.2000.194731

Degradation of Si MOSFET gate oxides by ion implantation

Y. V. Ponomarev, P. A. Stolk, C. J.J. Dachs, P. H. Woerlee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

We have characterised the effects of ion implantation in advanced MOSFETs, and have shown that severe gate oxide degradations can be induced by ion implantations used routinely in front-end processing of MOS transistors. The mechanisms of oxide degradation are revealed to be connected to the nuclear energy transfer to the O atoms in the oxide during implantation. Si and O ion mixing can result in significant increase of the effective oxide thickness which also result in intrinsic device performance degradation.

Original language	English
Title of host publication	ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Editors	H. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
Place of Publication	Piscataway
Publisher	IEEE Computer Society
Pages	128-131
Number of pages	4
ISBN (Print)	9782863322482, 2863322486
DOIs	https://doi.org/10.1109/ESSDERC.2000.194731
Publication status	Published - 1 Jan 2000
Externally published	Yes
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 11 Sept 2000 → 13 Sept 2000

Conference

Conference	30th European Solid-State Device Research Conference, ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	11/09/00 → 13/09/00

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10.1109/ESSDERC.2000.194731

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Ponomarev, Y. V., Stolk, P. A., Dachs, C. J. J., & Woerlee, P. H. (2000). Degradation of Si MOSFET gate oxides by ion implantation. In H. Grunbacher, G. M. Crean, W. A. Lane, & F. A. McCabe (Eds.), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 128-131). Article 1503661 IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2000.194731

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title = "Degradation of Si MOSFET gate oxides by ion implantation",

abstract = "We have characterised the effects of ion implantation in advanced MOSFETs, and have shown that severe gate oxide degradations can be induced by ion implantations used routinely in front-end processing of MOS transistors. The mechanisms of oxide degradation are revealed to be connected to the nuclear energy transfer to the O atoms in the oxide during implantation. Si and O ion mixing can result in significant increase of the effective oxide thickness which also result in intrinsic device performance degradation.",

author = "Ponomarev, {Y. V.} and Stolk, {P. A.} and Dachs, {C. J.J.} and Woerlee, {P. H.}",

year = "2000",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2000.194731",

language = "English",

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pages = "128--131",

editor = "H. Grunbacher and Crean, {Gabriel M.} and Lane, {W. A.} and McCabe, {Frank A.}",

booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

address = "United States",

note = "30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

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Ponomarev, YV, Stolk, PA, Dachs, CJJ & Woerlee, PH 2000, Degradation of Si MOSFET gate oxides by ion implantation. in H Grunbacher, GM Crean, WA Lane & FA McCabe (eds), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503661, IEEE Computer Society, Piscataway, pp. 128-131, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 11/09/00. https://doi.org/10.1109/ESSDERC.2000.194731

Degradation of Si MOSFET gate oxides by ion implantation. / Ponomarev, Y. V.; Stolk, P. A.; Dachs, C. J.J. et al.
ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. ed. / H. Grunbacher; Gabriel M. Crean; W. A. Lane; Frank A. McCabe. Piscataway: IEEE Computer Society, 2000. p. 128-131 1503661.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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N2 - We have characterised the effects of ion implantation in advanced MOSFETs, and have shown that severe gate oxide degradations can be induced by ion implantations used routinely in front-end processing of MOS transistors. The mechanisms of oxide degradation are revealed to be connected to the nuclear energy transfer to the O atoms in the oxide during implantation. Si and O ion mixing can result in significant increase of the effective oxide thickness which also result in intrinsic device performance degradation.

AB - We have characterised the effects of ion implantation in advanced MOSFETs, and have shown that severe gate oxide degradations can be induced by ion implantations used routinely in front-end processing of MOS transistors. The mechanisms of oxide degradation are revealed to be connected to the nuclear energy transfer to the O atoms in the oxide during implantation. Si and O ion mixing can result in significant increase of the effective oxide thickness which also result in intrinsic device performance degradation.

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SN - 2863322486

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BT - ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference

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A2 - Lane, W. A.

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T2 - 30th European Solid-State Device Research Conference, ESSDERC 2000

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ER -

Degradation of Si MOSFET gate oxides by ion implantation

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