The reaction of silicon-containing vapour with a photoresist layer, as used in dry developable lithographic processes, was studied with Rutherford backscattering spectrometry (RBS). Degradation of the polymer layer was observed, but the total amount of incorporated Si was found to be constant during the measurement. Si-depth profiles were found to be independent of dose and in agreement with profiles obtained with secondary ion mass spectrometry (SIMS). The detection of hydrogen by elastic recoil detection (ERD) was used to study the degradation in detail. The decrease in hydrogen countrate from a layer of polystyrene on Si in combination with the shift of the Si-substrate edge in the corresponding RBS spectra was used for a model description. Only one degradation cross-section for hydrogen and one for carbon, both independent of beam current and dose, were required for a successful fit of the experimental data.
|Number of pages||3|
|Journal||Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 1989|
IJzendoorn, van, L. J., & Schellekens, J. P. W. (1989). Degradation effects and Si-depth profiling in photoresists using ion beam analysis. Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 40-41(2), 806-808. https://doi.org/10.1016/0168-583X(89)90482-5