Abstract
Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. Submicrometer wafer-flatness is shown to be required to achieve the critical dimension uniformity better than 10 nm on 3-in substrates. Arrayed waveguide grating devices were fabricated and the effect of inter-waveguide gap scaling on the excess losses was measured and compared to simulations. Excess losses down to 0.15 dB were demonstrated to be lower than predicted with the 2-D simulations. The tapering of the etch depth inside the gaps due to the lag effect of the etch process may explain the improvements.
Original language | English |
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Pages (from-to) | 1222-1225 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 30 |
Issue number | 13 |
DOIs | |
Publication status | Published - 1 Jul 2018 |
Keywords
- Arrayed Waveguide Grating
- Indium Phosphide
- Lithography
- Photonic Integrated Circuit
- photonic integrated circuit
- Arrayed waveguide grating
- indium phosphide
- lithography