Deep UV lithography process in generic InP integration for arrayed waveguide gratings

J. Bolk, H. Ambrosius, R. Stabile, S. Latkowski, X. Leijtens, E. Bitincka, L. Augustin, D. Marsan, J. Darracq, K. Williams

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)
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Abstract

Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. Submicrometer wafer-flatness is shown to be required to achieve the critical dimension uniformity better than 10 nm on 3-in substrates. Arrayed waveguide grating devices were fabricated and the effect of inter-waveguide gap scaling on the excess losses was measured and compared to simulations. Excess losses down to 0.15 dB were demonstrated to be lower than predicted with the 2-D simulations. The tapering of the etch depth inside the gaps due to the lag effect of the etch process may explain the improvements.

Original languageEnglish
Pages (from-to)1222-1225
Number of pages4
JournalIEEE Photonics Technology Letters
Volume30
Issue number13
DOIs
Publication statusPublished - 1 Jul 2018

Keywords

  • Arrayed Waveguide Grating
  • Indium Phosphide
  • Lithography
  • Photonic Integrated Circuit
  • photonic integrated circuit
  • Arrayed waveguide grating
  • indium phosphide
  • lithography

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