Deep UV lithography process in generic InP integration for arrayed waveguide gratings

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Abstract

Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. Submicrometer wafer-flatness is shown to be required to achieve the critical dimension uniformity better than 10 nm on 3-in substrates. Arrayed waveguide grating devices were fabricated and the effect of inter-waveguide gap scaling on the excess losses was measured and compared to simulations. Excess losses down to 0.15 dB were demonstrated to be lower than predicted with the 2-D simulations. The tapering of the etch depth inside the gaps due to the lag effect of the etch process may explain the improvements.

Original languageEnglish
Pages (from-to)1222-1225
Number of pages4
JournalIEEE Photonics Technology Letters
Volume30
Issue number13
DOIs
Publication statusPublished - 1 Jul 2018

Keywords

  • Arrayed Waveguide Grating
  • Indium Phosphide
  • Lithography
  • Photonic Integrated Circuit
  • photonic integrated circuit
  • Arrayed waveguide grating
  • indium phosphide
  • lithography

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