Deep etching of DBR gratings in InP using CI2 based ICP processes

B. Docter; E.J. Geluk; M.J.H. Sander -  Jochem; F. Karouta; M.K. Smit

Deep etching of DBR gratings in InP using CI2 based ICP processes

B. Docter, E.J. Geluk, M.J.H. Sander - Jochem, F. Karouta, M.K. Smit

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

We present the progress on deep etching of InP for the fabrication of DBR gratings in Photonic Integrated Circuits (PICs). Various etching chemistries were investigated using an Inductively Coupled Plasma (ICP) etching system. It is shown how the different process settings determine the etched profile and sidewall roughness. Different masking techniques were also investigated. Hard masks using SiNx and SiO2 layers are discussed, as well as a three-level masking technique using hard baked photoresist or polyimide. Special attention is paid to applying Electron Beam Lithography (EBL) in the fabrication of the etching mask. A combination of Aluminum lift-off and SiO2 shows the best results.

Original language	English
Title of host publication	Proceedings of the 11th Annual Symposium of the IEEE/LEOS Benelux Chapter, 30 November - 1 December 2006, Eindhoven, The Netherlands
Editors	A.M.J. Koonen, X.J.M. Leijtens
Place of Publication	Eindhoven
Publisher	Technische Universiteit Eindhoven
Pages	97-100
ISBN (Print)	90-6144-989-8
Publication status	Published - 2006
Event	11th Annual Symposium of the IEEE/LEOS Benelux Chapter - Eindhoven, Netherlands Duration: 30 Nov 2006 → 1 Dec 2006

Conference

Conference	11th Annual Symposium of the IEEE/LEOS Benelux Chapter
Country	Netherlands
City	Eindhoven
Period	30/11/06 → 1/12/06

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Docter, B., Geluk, E. J., Sander - Jochem, M. J. H., Karouta, F., & Smit, M. K. (2006). Deep etching of DBR gratings in InP using CI2 based ICP processes. In A. M. J. Koonen, & X. J. M. Leijtens (Eds.), Proceedings of the 11th Annual Symposium of the IEEE/LEOS Benelux Chapter, 30 November - 1 December 2006, Eindhoven, The Netherlands (pp. 97-100). Technische Universiteit Eindhoven.

Docter, B. ; Geluk, E.J. ; Sander - Jochem, M.J.H. ; Karouta, F. ; Smit, M.K. / Deep etching of DBR gratings in InP using CI2 based ICP processes. Proceedings of the 11th Annual Symposium of the IEEE/LEOS Benelux Chapter, 30 November - 1 December 2006, Eindhoven, The Netherlands. editor / A.M.J. Koonen ; X.J.M. Leijtens. Eindhoven : Technische Universiteit Eindhoven, 2006. pp. 97-100

@inproceedings{859d1f4f36ea41f68692232742306959,

title = "Deep etching of DBR gratings in InP using CI2 based ICP processes",

abstract = "We present the progress on deep etching of InP for the fabrication of DBR gratings in Photonic Integrated Circuits (PICs). Various etching chemistries were investigated using an Inductively Coupled Plasma (ICP) etching system. It is shown how the different process settings determine the etched profile and sidewall roughness. Different masking techniques were also investigated. Hard masks using SiNx and SiO2 layers are discussed, as well as a three-level masking technique using hard baked photoresist or polyimide. Special attention is paid to applying Electron Beam Lithography (EBL) in the fabrication of the etching mask. A combination of Aluminum lift-off and SiO2 shows the best results.",

author = "B. Docter and E.J. Geluk and {Sander - Jochem}, M.J.H. and F. Karouta and M.K. Smit",

year = "2006",

language = "English",

isbn = "90-6144-989-8",

pages = "97--100",

editor = "A.M.J. Koonen and X.J.M. Leijtens",

booktitle = "Proceedings of the 11th Annual Symposium of the IEEE/LEOS Benelux Chapter, 30 November - 1 December 2006, Eindhoven, The Netherlands",

publisher = "Technische Universiteit Eindhoven",

note = "11th Annual Symposium of the IEEE/LEOS Benelux Chapter ; Conference date: 30-11-2006 Through 01-12-2006",

}

Docter, B, Geluk, EJ, Sander - Jochem, MJH, Karouta, F & Smit, MK 2006, Deep etching of DBR gratings in InP using CI2 based ICP processes. in AMJ Koonen & XJM Leijtens (eds), Proceedings of the 11th Annual Symposium of the IEEE/LEOS Benelux Chapter, 30 November - 1 December 2006, Eindhoven, The Netherlands. Technische Universiteit Eindhoven, Eindhoven, pp. 97-100, 11th Annual Symposium of the IEEE/LEOS Benelux Chapter, Eindhoven, Netherlands, 30/11/06.

Deep etching of DBR gratings in InP using CI2 based ICP processes. / Docter, B.; Geluk, E.J.; Sander - Jochem, M.J.H.; Karouta, F.; Smit, M.K.

Proceedings of the 11th Annual Symposium of the IEEE/LEOS Benelux Chapter, 30 November - 1 December 2006, Eindhoven, The Netherlands. ed. / A.M.J. Koonen; X.J.M. Leijtens. Eindhoven : Technische Universiteit Eindhoven, 2006. p. 97-100.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Deep etching of DBR gratings in InP using CI2 based ICP processes

AU - Docter, B.

AU - Geluk, E.J.

AU - Sander - Jochem, M.J.H.

AU - Karouta, F.

AU - Smit, M.K.

PY - 2006

Y1 - 2006

N2 - We present the progress on deep etching of InP for the fabrication of DBR gratings in Photonic Integrated Circuits (PICs). Various etching chemistries were investigated using an Inductively Coupled Plasma (ICP) etching system. It is shown how the different process settings determine the etched profile and sidewall roughness. Different masking techniques were also investigated. Hard masks using SiNx and SiO2 layers are discussed, as well as a three-level masking technique using hard baked photoresist or polyimide. Special attention is paid to applying Electron Beam Lithography (EBL) in the fabrication of the etching mask. A combination of Aluminum lift-off and SiO2 shows the best results.

AB - We present the progress on deep etching of InP for the fabrication of DBR gratings in Photonic Integrated Circuits (PICs). Various etching chemistries were investigated using an Inductively Coupled Plasma (ICP) etching system. It is shown how the different process settings determine the etched profile and sidewall roughness. Different masking techniques were also investigated. Hard masks using SiNx and SiO2 layers are discussed, as well as a three-level masking technique using hard baked photoresist or polyimide. Special attention is paid to applying Electron Beam Lithography (EBL) in the fabrication of the etching mask. A combination of Aluminum lift-off and SiO2 shows the best results.

M3 - Conference contribution

SN - 90-6144-989-8

SP - 97

EP - 100

BT - Proceedings of the 11th Annual Symposium of the IEEE/LEOS Benelux Chapter, 30 November - 1 December 2006, Eindhoven, The Netherlands

A2 - Koonen, A.M.J.

A2 - Leijtens, X.J.M.

PB - Technische Universiteit Eindhoven

CY - Eindhoven

T2 - 11th Annual Symposium of the IEEE/LEOS Benelux Chapter

Y2 - 30 November 2006 through 1 December 2006

ER -