Deep etching of DBR gratings in InP using CI2 based ICP processes

B. Docter, E.J. Geluk, M.J.H. Sander - Jochem, F. Karouta, M.K. Smit

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Abstract

We present the progress on deep etching of InP for the fabrication of DBR gratings in Photonic Integrated Circuits (PICs). Various etching chemistries were investigated using an Inductively Coupled Plasma (ICP) etching system. It is shown how the different process settings determine the etched profile and sidewall roughness. Different masking techniques were also investigated. Hard masks using SiNx and SiO2 layers are discussed, as well as a three-level masking technique using hard baked photoresist or polyimide. Special attention is paid to applying Electron Beam Lithography (EBL) in the fabrication of the etching mask. A combination of Aluminum lift-off and SiO2 shows the best results.
Original languageEnglish
Title of host publicationProceedings of the 11th Annual Symposium of the IEEE/LEOS Benelux Chapter, 30 November - 1 December 2006, Eindhoven, The Netherlands
EditorsA.M.J. Koonen, X.J.M. Leijtens
Place of PublicationEindhoven
PublisherTechnische Universiteit Eindhoven
Pages97-100
ISBN (Print)90-6144-989-8
Publication statusPublished - 2006
Event11th Annual Symposium of the IEEE/LEOS Benelux Chapter - Eindhoven, Netherlands
Duration: 30 Nov 20061 Dec 2006

Conference

Conference11th Annual Symposium of the IEEE/LEOS Benelux Chapter
CountryNetherlands
CityEindhoven
Period30/11/061/12/06

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