Abstract
We present the progress on deep etching of InP for the fabrication of DBR gratings in Photonic Integrated Circuits (PICs). Various etching chemistries were investigated using an Inductively Coupled Plasma (ICP) etching system. It is shown how the different process settings determine the etched profile and sidewall roughness. Different masking techniques were also investigated. Hard masks using SiNx and SiO2 layers are discussed, as well as a three-level masking technique using hard baked photoresist or polyimide. Special attention is paid to applying Electron Beam Lithography (EBL) in the fabrication of the etching mask. A combination of Aluminum lift-off and SiO2 shows the best results.
Original language | English |
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Title of host publication | Proceedings of the 11th Annual Symposium of the IEEE/LEOS Benelux Chapter, 30 November - 1 December 2006, Eindhoven, The Netherlands |
Editors | A.M.J. Koonen, X.J.M. Leijtens |
Place of Publication | Eindhoven |
Publisher | Technische Universiteit Eindhoven |
Pages | 97-100 |
ISBN (Print) | 90-6144-989-8 |
Publication status | Published - 2006 |
Event | 11th Annual Symposium of the IEEE/LEOS Benelux Chapter - Eindhoven, Netherlands Duration: 30 Nov 2006 → 1 Dec 2006 |
Conference
Conference | 11th Annual Symposium of the IEEE/LEOS Benelux Chapter |
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Country/Territory | Netherlands |
City | Eindhoven |
Period | 30/11/06 → 1/12/06 |