Abstract
A novel fabrication process for the realization of deep-etched DBR gratings in InP is presented. It is shown that a combination of chromium and SiOx provides a very resistant etching mask for Cl2-based ICP etching. Both e-beam and optical lithography are used to limit e-beam writing time.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 13th European Conference on Integrated Optics (ECIO 2007) 25-27 April 2007, Copenhagen, Denmark |
| Pages | ThG20-1/3 |
| Publication status | Published - 2007 |
| Event | 13th European Conference on Integrated Optics (ECIO 2007) - Copenhagen, Denmark Duration: 25 Apr 2007 → 27 Apr 2007 Conference number: 13 |
Conference
| Conference | 13th European Conference on Integrated Optics (ECIO 2007) |
|---|---|
| Abbreviated title | ECIO 2007 |
| Country/Territory | Denmark |
| City | Copenhagen |
| Period | 25/04/07 → 27/04/07 |