Data transmission using GaAs-based InAs-InGaAs quantum dot LEDs emitting at 1.3 µm wavelength

M. Kicherer, A. Fiore, U. Oesterle, R.P. Stanley, M. Ilegems, R. Michalzik

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

Vertical emission light-emitting diodes (LEDs), based on long-wavelength, self-assembled InAs-InGaAs quantum dots (QDs) grown on GaAs substrate, are used to demonstrate up to 1 Gbit/s digital data transmission. The devices are characterized in terms of small-signal modulation, showing bandwidths beyond 1 GHz. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)906-907
JournalElectronics Letters
Volume38
Issue number16
DOIs
Publication statusPublished - 2002

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