Current-voltage relation for abrupt N+-P-N+ and N-i-N structures

J.G.C. Bakker; J. Bisschop; W.H.A. Schilders

doi:10.1016/0038-1101(92)90316-5

Current-voltage relation for abrupt N+-P-N+ and N-i-N structures

J.G.C. Bakker
, J. Bisschop
, W.H.A. Schilders

Research output: Contribution to journal › Article › Academic › peer-review

2 Citations (Scopus)

1 Downloads (Pure)

Abstract

Numerical simulations of abrupt N-P-N structures with homogeneously doped layers show a systematic deviation from the analytical formulae, due to the application of the depletion approximation. The error in the depletion approximation, as a function of barrier doping, is found to reach a maximum in the limit of an intrinsic barrier region. The potential and charge distribution in the static N-i-N structure, including the effects of the charge distribution at the N-sides, is calculated analytically. For this structure a linear current-voltage relation is derived, and found in agreement with numerical results.

Original language	English
Pages (from-to)	897-904
Journal	Solid-State Electronics
Volume	35
Issue number	7
DOIs	https://doi.org/10.1016/0038-1101(92)90316-5
Publication status	Published - 1992

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title = "Current-voltage relation for abrupt N+-P-N+ and N-i-N structures",

abstract = "Numerical simulations of abrupt N-P-N structures with homogeneously doped layers show a systematic deviation from the analytical formulae, due to the application of the depletion approximation. The error in the depletion approximation, as a function of barrier doping, is found to reach a maximum in the limit of an intrinsic barrier region. The potential and charge distribution in the static N-i-N structure, including the effects of the charge distribution at the N-sides, is calculated analytically. For this structure a linear current-voltage relation is derived, and found in agreement with numerical results.",

author = "J.G.C. Bakker and J. Bisschop and W.H.A. Schilders",

year = "1992",

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T1 - Current-voltage relation for abrupt N+-P-N+ and N-i-N structures

AU - Bakker, J.G.C.

AU - Bisschop, J.

AU - Schilders, W.H.A.

PY - 1992

Y1 - 1992

N2 - Numerical simulations of abrupt N-P-N structures with homogeneously doped layers show a systematic deviation from the analytical formulae, due to the application of the depletion approximation. The error in the depletion approximation, as a function of barrier doping, is found to reach a maximum in the limit of an intrinsic barrier region. The potential and charge distribution in the static N-i-N structure, including the effects of the charge distribution at the N-sides, is calculated analytically. For this structure a linear current-voltage relation is derived, and found in agreement with numerical results.

AB - Numerical simulations of abrupt N-P-N structures with homogeneously doped layers show a systematic deviation from the analytical formulae, due to the application of the depletion approximation. The error in the depletion approximation, as a function of barrier doping, is found to reach a maximum in the limit of an intrinsic barrier region. The potential and charge distribution in the static N-i-N structure, including the effects of the charge distribution at the N-sides, is calculated analytically. For this structure a linear current-voltage relation is derived, and found in agreement with numerical results.

U2 - 10.1016/0038-1101(92)90316-5

DO - 10.1016/0038-1101(92)90316-5

M3 - Article

SN - 0038-1101

VL - 35

SP - 897

EP - 904

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 7

ER -

Current-voltage relation for abrupt N+-P-N+ and N-i-N structures

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