Current-voltage relation for abrupt N+-P-N+ and N-i-N structures

J.G.C. Bakker, J. Bisschop, W.H.A. Schilders

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    Abstract

    Numerical simulations of abrupt N-P-N structures with homogeneously doped layers show a systematic deviation from the analytical formulae, due to the application of the depletion approximation. The error in the depletion approximation, as a function of barrier doping, is found to reach a maximum in the limit of an intrinsic barrier region. The potential and charge distribution in the static N-i-N structure, including the effects of the charge distribution at the N-sides, is calculated analytically. For this structure a linear current-voltage relation is derived, and found in agreement with numerical results.
    Original languageEnglish
    Pages (from-to)897-904
    JournalSolid-State Electronics
    Volume35
    Issue number7
    DOIs
    Publication statusPublished - 1992

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