### Abstract

Numerical simulations of abrupt N-P-N structures with homogeneously doped layers show a systematic deviation from the analytical formulae, due to the application of the depletion approximation. The error in the depletion approximation, as a function of barrier doping, is found to reach a maximum in the limit of an intrinsic barrier region. The potential and charge distribution in the static N-i-N structure, including the effects of the charge distribution at the N-sides, is calculated analytically. For this structure a linear current-voltage relation is derived, and found in agreement with numerical results.

Original language | English |
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Pages (from-to) | 897-904 |

Journal | Solid-State Electronics |

Volume | 35 |

Issue number | 7 |

DOIs | |

Publication status | Published - 1992 |

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## Cite this

Bakker, J. G. C., Bisschop, J., & Schilders, W. H. A. (1992). Current-voltage relation for abrupt N+-P-N+ and N-i-N structures.

*Solid-State Electronics*,*35*(7), 897-904. https://doi.org/10.1016/0038-1101(92)90316-5