TY - JOUR

T1 - Current-voltage relation for abrupt N+-P-N+ and N-i-N structures

AU - Bakker, J.G.C.

AU - Bisschop, J.

AU - Schilders, W.H.A.

PY - 1992

Y1 - 1992

N2 - Numerical simulations of abrupt N-P-N structures with homogeneously doped layers show a systematic deviation from the analytical formulae, due to the application of the depletion approximation. The error in the depletion approximation, as a function of barrier doping, is found to reach a maximum in the limit of an intrinsic barrier region. The potential and charge distribution in the static N-i-N structure, including the effects of the charge distribution at the N-sides, is calculated analytically. For this structure a linear current-voltage relation is derived, and found in agreement with numerical results.

AB - Numerical simulations of abrupt N-P-N structures with homogeneously doped layers show a systematic deviation from the analytical formulae, due to the application of the depletion approximation. The error in the depletion approximation, as a function of barrier doping, is found to reach a maximum in the limit of an intrinsic barrier region. The potential and charge distribution in the static N-i-N structure, including the effects of the charge distribution at the N-sides, is calculated analytically. For this structure a linear current-voltage relation is derived, and found in agreement with numerical results.

U2 - 10.1016/0038-1101(92)90316-5

DO - 10.1016/0038-1101(92)90316-5

M3 - Article

VL - 35

SP - 897

EP - 904

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7

ER -