Cubic phase stabilization and improved dielectric properties of atomic-layer-deposited EryHf1-yOx thin films

K.B. Jinesh, Y. Lamy, E. Tois, R. Forti, M. Kaiser, F. Bakker, H.J. Wondergem, W.F.A. Besling, F. Roozeboom

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Abstract

The electrical and physical properties of atomic-layer-deposited EryHf1-yOx thin films have been investigated with different stoichiometries of erbium oxide (Er2O3) and hafnium oxide (HfO2). The as-deposited and annealed EryHf1-yOx films exhibit much higher dielectric constants than the reported k-values of the corresponding binary oxides. The highest k-value of 37.6 ± 1 is achieved with 13 at.% of erbium in the film. The enhancement in dielectric constant is due to the formation of the cubic HfO2 phase stabilized by erbium, as revealed by x-ray diffraction experiments. The annealed mixed oxide films exhibit remarkably low oxide charges, low interface states, low leakage, and good breakdown electric fields.
Original languageEnglish
Pages (from-to)1629-1635
JournalJournal of Materials Research
Volume25
Issue number8
DOIs
Publication statusPublished - 2010

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