Crystalline silicon surface passivation by the negative-charge-dielectric Al2O3

B. Hoex; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1109/PVSC.2008.4922635

Crystalline silicon surface passivation by the negative-charge-dielectric Al2O3

B. Hoex, M.C.M. Sanden, van de, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

11 Citations (Scopus)

208 Downloads (Pure)

Abstract

In this contribution it will demonstrated that Al2O3 films synthesized by plasma-assisted atomic layer deposition are a very interesting low temperature solution for the passivation of highly and lowly doped p-type c-Si and lightly doped n-type c-Si. From experiments it will be shown that the excellent surface passivation by Al2O3 can for a large part be attributed to a high fixed negative charge density in the film on the film-substrate interface. The implications of this high fixed negative charge density on the surface passivation of both n- and p-type c-Si will be addressed.

Original language	English
Title of host publication	Proceedings of the 33th IEEE Photovoltaic Specialist Conference (PVSC 2008) 11-16 May 2008, San Diego, CA, USA
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1-4
DOIs	https://doi.org/10.1109/PVSC.2008.4922635
Publication status	Published - 2008
Event	33rd IEEE Photovoltaic Specialists Conference (PVSC 2008) - Manchester Grand Hyatt, San Diego, United States Duration: 11 May 2008 → 16 May 2008 Conference number: 33

Conference

Conference	33rd IEEE Photovoltaic Specialists Conference (PVSC 2008)
Abbreviated title	PVSC 2008
Country/Territory	United States
City	San Diego
Period	11/05/08 → 16/05/08

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title = "Crystalline silicon surface passivation by the negative-charge-dielectric Al2O3",

abstract = "In this contribution it will demonstrated that Al2O3 films synthesized by plasma-assisted atomic layer deposition are a very interesting low temperature solution for the passivation of highly and lowly doped p-type c-Si and lightly doped n-type c-Si. From experiments it will be shown that the excellent surface passivation by Al2O3 can for a large part be attributed to a high fixed negative charge density in the film on the film-substrate interface. The implications of this high fixed negative charge density on the surface passivation of both n- and p-type c-Si will be addressed.",

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language = "English",

pages = "1--4",

booktitle = "Proceedings of the 33th IEEE Photovoltaic Specialist Conference (PVSC 2008) 11-16 May 2008, San Diego, CA, USA",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "33rd IEEE Photovoltaic Specialists Conference (PVSC 2008), PVSC 2008 ; Conference date: 11-05-2008 Through 16-05-2008",

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Hoex, B, Sanden, van de, MCM & Kessels, WMM 2008, Crystalline silicon surface passivation by the negative-charge-dielectric Al2O3. in Proceedings of the 33th IEEE Photovoltaic Specialist Conference (PVSC 2008) 11-16 May 2008, San Diego, CA, USA. Institute of Electrical and Electronics Engineers, Piscataway, pp. 1-4, 33rd IEEE Photovoltaic Specialists Conference (PVSC 2008), San Diego, California, United States, 11/05/08. https://doi.org/10.1109/PVSC.2008.4922635

Crystalline silicon surface passivation by the negative-charge-dielectric Al2O3. / Hoex, B.; Sanden, van de, M.C.M.; Kessels, W.M.M.
Proceedings of the 33th IEEE Photovoltaic Specialist Conference (PVSC 2008) 11-16 May 2008, San Diego, CA, USA. Piscataway: Institute of Electrical and Electronics Engineers, 2008. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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AB - In this contribution it will demonstrated that Al2O3 films synthesized by plasma-assisted atomic layer deposition are a very interesting low temperature solution for the passivation of highly and lowly doped p-type c-Si and lightly doped n-type c-Si. From experiments it will be shown that the excellent surface passivation by Al2O3 can for a large part be attributed to a high fixed negative charge density in the film on the film-substrate interface. The implications of this high fixed negative charge density on the surface passivation of both n- and p-type c-Si will be addressed.

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BT - Proceedings of the 33th IEEE Photovoltaic Specialist Conference (PVSC 2008) 11-16 May 2008, San Diego, CA, USA

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Y2 - 11 May 2008 through 16 May 2008

ER -

Crystalline silicon surface passivation by the negative-charge-dielectric Al2O3

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