Crystalline silicon surface passivation by the negative-charge-dielectric Al2O3

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Abstract

In this contribution it will demonstrated that Al2O3 films synthesized by plasma-assisted atomic layer deposition are a very interesting low temperature solution for the passivation of highly and lowly doped p-type c-Si and lightly doped n-type c-Si. From experiments it will be shown that the excellent surface passivation by Al2O3 can for a large part be attributed to a high fixed negative charge density in the film on the film-substrate interface. The implications of this high fixed negative charge density on the surface passivation of both n- and p-type c-Si will be addressed.
Original languageEnglish
Title of host publicationProceedings of the 33th IEEE Photovoltaic Specialist Conference (PVSC 2008) 11-16 May 2008, San Diego, CA, USA
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1-4
DOIs
Publication statusPublished - 2008
Event33rd IEEE Photovoltaic Specialists Conference (PVSC 2008) - Manchester Grand Hyatt, San Diego, United States
Duration: 11 May 200816 May 2008
Conference number: 33

Conference

Conference33rd IEEE Photovoltaic Specialists Conference (PVSC 2008)
Abbreviated titlePVSC 2008
Country/TerritoryUnited States
CitySan Diego
Period11/05/0816/05/08

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