Crystal phase quantum well emission with digital control

S. Assali, J. Lähnemann, T.T.T. Vu, K.D. Jöns, L. Gagliano, M. A. Verheijen, N. Akopian, E.P.A.M. Bakkers, J.E.M. Haverkort

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

Original languageEnglish
Pages (from-to)6062-6068
Number of pages7
JournalNano Letters
Volume17
Issue number10
DOIs
Publication statusPublished - 11 Oct 2017

Fingerprint

Semiconductor quantum wells
Zinc
wurtzite
zinc
quantum wells
Crystals
crystals
Semiconductor quantum dots
Nanowires
nanowires
quantum dots
Plasma confinement
flat plates
Charge carriers
Band structure
engineers
Heterojunctions
charge carriers
Monolayers
discontinuity

Keywords

  • crystal phase quantum well
  • gallium phosphide
  • photoluminescence
  • Semiconductor nanowire
  • spontaneous polarization

Cite this

Assali, S. ; Lähnemann, J. ; Vu, T.T.T. ; Jöns, K.D. ; Gagliano, L. ; Verheijen, M. A. ; Akopian, N. ; Bakkers, E.P.A.M. ; Haverkort, J.E.M. / Crystal phase quantum well emission with digital control. In: Nano Letters. 2017 ; Vol. 17, No. 10. pp. 6062-6068.
@article{0376331836d740ef822bbda26cf04feb,
title = "Crystal phase quantum well emission with digital control",
abstract = "One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.",
keywords = "crystal phase quantum well, gallium phosphide, photoluminescence, Semiconductor nanowire, spontaneous polarization",
author = "S. Assali and J. L{\"a}hnemann and T.T.T. Vu and K.D. J{\"o}ns and L. Gagliano and Verheijen, {M. A.} and N. Akopian and E.P.A.M. Bakkers and J.E.M. Haverkort",
year = "2017",
month = "10",
day = "11",
doi = "10.1021/acs.nanolett.7b02489",
language = "English",
volume = "17",
pages = "6062--6068",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "10",

}

Assali, S, Lähnemann, J, Vu, TTT, Jöns, KD, Gagliano, L, Verheijen, MA, Akopian, N, Bakkers, EPAM & Haverkort, JEM 2017, 'Crystal phase quantum well emission with digital control', Nano Letters, vol. 17, no. 10, pp. 6062-6068. https://doi.org/10.1021/acs.nanolett.7b02489

Crystal phase quantum well emission with digital control. / Assali, S.; Lähnemann, J.; Vu, T.T.T.; Jöns, K.D.; Gagliano, L.; Verheijen, M. A.; Akopian, N.; Bakkers, E.P.A.M.; Haverkort, J.E.M.

In: Nano Letters, Vol. 17, No. 10, 11.10.2017, p. 6062-6068.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Crystal phase quantum well emission with digital control

AU - Assali, S.

AU - Lähnemann, J.

AU - Vu, T.T.T.

AU - Jöns, K.D.

AU - Gagliano, L.

AU - Verheijen, M. A.

AU - Akopian, N.

AU - Bakkers, E.P.A.M.

AU - Haverkort, J.E.M.

PY - 2017/10/11

Y1 - 2017/10/11

N2 - One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

AB - One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

KW - crystal phase quantum well

KW - gallium phosphide

KW - photoluminescence

KW - Semiconductor nanowire

KW - spontaneous polarization

UR - http://www.scopus.com/inward/record.url?scp=85031098565&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.7b02489

DO - 10.1021/acs.nanolett.7b02489

M3 - Article

C2 - 28892396

AN - SCOPUS:85031098565

VL - 17

SP - 6062

EP - 6068

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 10

ER -

Assali S, Lähnemann J, Vu TTT, Jöns KD, Gagliano L, Verheijen MA et al. Crystal phase quantum well emission with digital control. Nano Letters. 2017 Oct 11;17(10):6062-6068. https://doi.org/10.1021/acs.nanolett.7b02489