TY - GEN
T1 - Cross-sectional STM on InGaAs/InAlAs laser structures
AU - Offermans, P.
AU - Koenraad, P.M.
AU - Wolter, J.H.
AU - Song, J.D.
AU - Kim, J.M.
AU - Bae, S.J.
AU - Lee, Y.T.
AU - Beck, M.
AU - Aellen, T.
AU - Faist, J.
PY - 2003
Y1 - 2003
N2 - A proper design of the active layers and injector layers is a vital step in producing
sophisticated III/V semiconductor laser structures. In order to generate the proper transition
energies and probabilities to obtain optimal laset characteristics, one must carefully engineer the laser thicknesses and/or laser compositions. Atomically resolved real-space scanning probetechniques are indispensable tools in optimizing and verifying the growth process. We have studied an InGaAs/InAlAs quantum cascade and a digital alloy quantum well laser stlucture with cross-sectional scanning hmneling microscopy (X-STM), We show the effect of rapid thermal annealing on the digital alloy quantum well structure. In the quantum cascade laser structure digital alloy grading was used to soften the barriers of the active region. We show that due to alloy fluctuations, softening of the barriers occurs even without the digital grading.
AB - A proper design of the active layers and injector layers is a vital step in producing
sophisticated III/V semiconductor laser structures. In order to generate the proper transition
energies and probabilities to obtain optimal laset characteristics, one must carefully engineer the laser thicknesses and/or laser compositions. Atomically resolved real-space scanning probetechniques are indispensable tools in optimizing and verifying the growth process. We have studied an InGaAs/InAlAs quantum cascade and a digital alloy quantum well laser stlucture with cross-sectional scanning hmneling microscopy (X-STM), We show the effect of rapid thermal annealing on the digital alloy quantum well structure. In the quantum cascade laser structure digital alloy grading was used to soften the barriers of the active region. We show that due to alloy fluctuations, softening of the barriers occurs even without the digital grading.
UR - http://www.scopus.com/inward/record.url?scp=85053290792&partnerID=8YFLogxK
U2 - 10.1201/9781351074636
DO - 10.1201/9781351074636
M3 - Conference contribution
SN - 0750309792
SN - 9781315895536
T3 - Institute of Physics Conference Series
SP - 653
EP - 656
BT - Microscopy of Semiconducting Materials 2003
PB - CRC Press
T2 - conference; Microscopy of Semiconducting Materials Conference, 2003; 2003-03-31; 2003-04-03
Y2 - 31 March 2003 through 3 April 2003
ER -