Cross-sectional STM on InGaAs/InAlAs laser structures

P. Offermans, P.M. Koenraad, J.H. Wolter, J.D. Song, J.M. Kim, S.J. Bae, Y.T. Lee, M. Beck, T. Aellen, J. Faist

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


A proper design of the active layers and injector layers is a vital step in producing sophisticated III/V semiconductor laser structures. In order to generate the proper transition energies and probabilities to obtain optimal laset characteristics, one must carefully engineer the laser thicknesses and/or laser compositions. Atomically resolved real-space scanning probetechniques are indispensable tools in optimizing and verifying the growth process. We have studied an InGaAs/InAlAs quantum cascade and a digital alloy quantum well laser stlucture with cross-sectional scanning hmneling microscopy (X-STM), We show the effect of rapid thermal annealing on the digital alloy quantum well structure. In the quantum cascade laser structure digital alloy grading was used to soften the barriers of the active region. We show that due to alloy fluctuations, softening of the barriers occurs even without the digital grading.
Original languageEnglish
Title of host publicationMicroscopy of Semiconducting Materials 2003
PublisherCRC Press
Number of pages4
ISBN (Electronic)9781351083089
ISBN (Print)0750309792, 9781315895536
Publication statusPublished - 2003
Eventconference; Microscopy of Semiconducting Materials Conference, 2003; 2003-03-31; 2003-04-03 -
Duration: 31 Mar 20033 Apr 2003

Publication series

NameInstitute of Physics Conference Series
ISSN (Print)0951-3248


Conferenceconference; Microscopy of Semiconducting Materials Conference, 2003; 2003-03-31; 2003-04-03
OtherMicroscopy of Semiconducting Materials Conference, 2003


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