Cross-sectional scanning tunneling microscopy study on II-VI multilayer structures

A. Wierts; J.M. Ulloa Herrero; C. Celebi; P.M. Koenraad; H. Boukari; L. Maingault; R. Andre; H. Mariette

doi:10.1063/1.2799254

Cross-sectional scanning tunneling microscopy study on II-VI multilayer structures

A. Wierts
, J.M. Ulloa Herrero
, C. Celebi
, P.M. Koenraad
, H. Boukari
, L. Maingault
, R. Andre
, H. Mariette

Research output: Contribution to journal › Article › Academic › peer-review

9 Citations (Scopus)

235 Downloads (Pure)

Abstract

Cross-sectional scanning tunneling microscopy is used to study in the at. scale the structural properties of ZnSeTe/ZnTe multiple quantum wells and N:ZnTe delta-doped structures. Some peculiar effects are found on the cleaved (110) ZnTe surface plane, which have not been obsd. in III-V semiconductors. In particular, cleavage induced monat. wide vacancy chains are always present on the Te sublattice. Furthermore, the semiconductor surface is manipulated when certain pos. voltages are applied to the sample. Regarding the heterostructures, the ZnSeTe/ZnTe quantum wells are found to have abrupt interfaces and the Se concn. is detd. to be significantly larger than the nominal value.

Original language	English
Article number	161907
Pages (from-to)	161907-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	91
Issue number	16
DOIs	https://doi.org/10.1063/1.2799254
Publication status	Published - 2007

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title = "Cross-sectional scanning tunneling microscopy study on II-VI multilayer structures",

abstract = "Cross-sectional scanning tunneling microscopy is used to study in the at. scale the structural properties of ZnSeTe/ZnTe multiple quantum wells and N:ZnTe delta-doped structures. Some peculiar effects are found on the cleaved (110) ZnTe surface plane, which have not been obsd. in III-V semiconductors. In particular, cleavage induced monat. wide vacancy chains are always present on the Te sublattice. Furthermore, the semiconductor surface is manipulated when certain pos. voltages are applied to the sample. Regarding the heterostructures, the ZnSeTe/ZnTe quantum wells are found to have abrupt interfaces and the Se concn. is detd. to be significantly larger than the nominal value.",

author = "A. Wierts and \{Ulloa Herrero\}, J.M. and C. Celebi and P.M. Koenraad and H. Boukari and L. Maingault and R. Andre and H. Mariette",

year = "2007",

doi = "10.1063/1.2799254",

language = "English",

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pages = "161907--1/3",

journal = "Applied Physics Letters",

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T1 - Cross-sectional scanning tunneling microscopy study on II-VI multilayer structures

AU - Wierts, A.

AU - Ulloa Herrero, J.M.

AU - Celebi, C.

AU - Koenraad, P.M.

AU - Boukari, H.

AU - Maingault, L.

AU - Andre, R.

AU - Mariette, H.

PY - 2007

Y1 - 2007

N2 - Cross-sectional scanning tunneling microscopy is used to study in the at. scale the structural properties of ZnSeTe/ZnTe multiple quantum wells and N:ZnTe delta-doped structures. Some peculiar effects are found on the cleaved (110) ZnTe surface plane, which have not been obsd. in III-V semiconductors. In particular, cleavage induced monat. wide vacancy chains are always present on the Te sublattice. Furthermore, the semiconductor surface is manipulated when certain pos. voltages are applied to the sample. Regarding the heterostructures, the ZnSeTe/ZnTe quantum wells are found to have abrupt interfaces and the Se concn. is detd. to be significantly larger than the nominal value.

AB - Cross-sectional scanning tunneling microscopy is used to study in the at. scale the structural properties of ZnSeTe/ZnTe multiple quantum wells and N:ZnTe delta-doped structures. Some peculiar effects are found on the cleaved (110) ZnTe surface plane, which have not been obsd. in III-V semiconductors. In particular, cleavage induced monat. wide vacancy chains are always present on the Te sublattice. Furthermore, the semiconductor surface is manipulated when certain pos. voltages are applied to the sample. Regarding the heterostructures, the ZnSeTe/ZnTe quantum wells are found to have abrupt interfaces and the Se concn. is detd. to be significantly larger than the nominal value.

U2 - 10.1063/1.2799254

DO - 10.1063/1.2799254

M3 - Article

SN - 0003-6951

VL - 91

SP - 161907-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161907

ER -

Cross-sectional scanning tunneling microscopy study on II-VI multilayer structures

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